Samsung Electronics Co., Ltd.

In Bo Shim

Jae-Sang Yun

Cheol Kwon

Jong-Wook Jeong

Iksung Park

Jongjoo Lee

Young Joon Jang

Doo-Jin Yi

Methods of programming firmware in a data storage device include pre-programming memory cells included in at least one nonvolatile memory of a plurality of nonvolatile memories using a first verification voltage higher than a first reference voltage before a surface mounting technology is applied to the nonvolatile memories.

Data storage having recovery function for threshold voltage distribution change of memory cells due to applying surface mounting technology and operating method

A solid state drive in accordance with embodiments of the present inventive concepts may include a nonvolatile memory, a volatile memory, a memory controller controlling the nonvolatile memory and the volatile memory, and a power generator providing power to the nonvolatile memory, the volatile memory, and the memory controller. A method of operating the solid state drive may include designating a bank that will perform a self refresh among a plurality of banks included in the volatile memory in response to a power saving mode signal. Information of the designated bank may be stored in a register in response to a command and an address signal; and a self refresh of the designated bank may be performed on the basis of the information stored in the register.

Solid state drive and operation method thereof

An auxiliary power supply device can include a first power storage unit, a first charging circuit to receive input power and charge the first power storage unit, a second power storage unit having lower power supply speed than the first power storage unit and longer power supply time than the first power storage unit, a second charge circuit to receive input power and charge the second power storage unit, and a switching unit to supply the stored power of the first power storage unit to external devices for a predetermined time when a sudden power-off occurs and supply stored power of the second power storage unit to the external devices after the predetermined time elapses.

Auxiliary power supply devices and nonvolatile memory systems including the same

A data storage device includes a voltage supply control circuit configured to receive an external voltage, generate different voltages from the external voltage, and supply the different voltages to loads, respectively, through voltage supply lines, respectively and a discharge control circuit configured to discharge residual voltages from the voltage supply lines in response to a control signal and the external voltage, the discharge control circuit configured to discharge the residual voltages in an order of a highest residual voltage to a lowest residual voltage.

Data storage device for forcibly discharging residual voltage, method operating the same, and data processing system including the same

A user system is provided including a plurality of flash memory devices and a memory controller connected to the flash memory devices through a plurality of channels. The memory controller includes a voltage regulator configured to supply a power of the flash memory devices and a compensation unit configured to supply an additional power to the flash memory devices when a power required by the flash memory devices exceeds a predetermined level. The compensation unit includes a resistor unit connected to an output terminal of the voltage regulator and input terminals of the flash memory devices and a charging unit connected to input terminals of the flash memory devices. The charging unit is configured to supply an additional power to the flash memory devices according to voltages of input terminals of the flash memory devices.

Growing community of inventors

Osan-si, South Korea

In Bo Shim