Samsung Electronics Co., Ltd.

Imsoo Park

Young-Hoo Kim

Sung-Jun Kim

Kuntack Lee

Daehong Eom

Changki Hong

Jaedong Lee

Donghyun Kim

Boun Yoon

Hyosan Lee

Sang Won Bae

Youngok Kim

Daehyuk Kang

A method of manufacturing a nonvolatile memory device having a three-dimensional memory device includes alternately stacking a plurality of first and second material layers having a different etching selectivity on a semiconductor substrate; forming an opening penetrating the plurality of first and second material layers; removing the first material layers exposed by the opening to form extended portions extending in a direction perpendicular to the semiconductor substrate from the opening; conformally forming a charge storage layer along a surface of the opening and the extended portions; and removing the charge storage layer formed on sidewalls of the second material layers to locally form the charge storage layer patterns in the extended portions.

Method of manufacturing nonvolatile memory device and nonvolatile memory device manufactured by the method

A method of fabricating a nonvolatile memory device with a three-dimensional structure includes alternately stacking first and second material layers in two or more layers on a semiconductor substrate, forming trenches penetrating the stacked first and second material layers by performing a first etching process, and removing the second material layers exposed in the trenches by performing a second etching process. The first and second material layers are formed of materials that have the same main component but have different impurity contents, respectively.

Method of fabricating nonvolatile memory device

A method of forming a pattern structure includes forming a thin film pattern on a substrate, the thin film pattern including depression portions with first bottom widths, forming a protection layer on the thin film pattern by implanting ions into the thin film pattern, and etching a lower portion of the thin film pattern selectively using the protection layer as a mask to increase the first bottom widths of the depression portions into second bottom widths.

Method of forming pattern structure

Growing community of inventors

Seongnam-si, South Korea

Imsoo Park