Reno Technologies, Inc.

Asm America, Inc.

Innovation Engineering LLC

Asm IP Holding B.v.

Advanced Energy Industries, Inc.

Imran Ahmed Bhutta

Michael Gilliam Ulrich

Tomislav Lozic

Ronald Anthony Decker

Bala Kandampalayam

Chingping Huang

Anton Mavretic

Frederick Hauer

Theresa Beizer

Joseph Osselburn

Ching Ping Huang

In one embodiment, a system includes an RF source and an RF impedance matching circuit receiving RF power from the RF source. The matching circuit includes at least one variable reactance element, a sensor operably coupled to a component of the matching circuit, and a control circuit. The control circuit receives a signal from the sensor indicative of a parameter value. Upon determining the parameter value meets a first predetermined condition, the control circuit transmits a control signal to the RF source causing the RF source to carry out a power control scheme. The power control scheme causes the RF source to reduce or maintain the RF power without turning off the RF power.

Power control for rf impedance matching network

In one embodiment, an RF impedance matching circuit is disclosed. The matching circuit is coupled between a plasma chamber and an RF source. The matching circuit includes a first electronically variable capacitor (EVC) having a first variable capacitance, a terminal of the first EVC being operably coupled to the RF input, and a second EVC having a second variable capacitance, a terminal of the second EVC being operably coupled to the RF output. A control circuit determines, based on a first parameter, a first capacitance value for the first EVC and a second capacitance value for the second EVC. The control circuit then generates a control signal to alter the first and second variable capacitances accordingly. The alteration of the capacitances, while the frequency of the RF source is not altered, causes RF power reflected back to the RF source to decrease.

RF impedance matching network

In one embodiment, an RF impedance matching circuit includes at least one electronically variable capacitor (EVC) comprising discrete fixed capacitors. Each fixed capacitor has a corresponding switching circuit for switching in and out the fixed capacitor to alter a total capacitance of the EVC. Each switching circuit includes a diode operably coupled to the fixed capacitor to cause the switching in and out of the fixed capacitor, the diode being a PIN diode or an NIP diode. Each switching circuit further includes a driver circuit operably coupled to the diode, and a resonant filter positioned between the driver circuit and the diode. The resonant filter includes an inductor and a capacitor coupled in parallel.

Resonant filter for solid state RF impedance matching network

In one embodiment, a method of matching an impedance is disclosed. An impedance matching network is coupled between a radio frequency (RF) source and a plasma chamber. The matching network includes a variable reactance element (VRE) having different positions for providing different reactances. The RF source is subject to a power control scheme to control a power delivered to the matching network. Based on a determined parameter, a new position for the VRE is determined to reduce a reflected power at the RF input of the matching network. The VRE is altered to the new position while the power control scheme is altered.

Combined RF generator and RF solid-state matching network

In one embodiment, an RF impedance matching network is disclosed. The matching network is coupled between an RF source having a variable frequency and a plasma chamber having a variable chamber impedance. The matching network includes a variable reactance element (VRE), and a control circuit coupled to the VRE and a sensor, the sensor configured to detect an RF parameter. To cause an impedance match between the RF source and the plasma chamber, the control circuit determines, based on the detected RF parameter and a VRE configuration, a new source frequency for the RF source. The impedance match then causes the variable frequency of the RF source to alter to the new source frequency.

Impedance matching network

In one embodiment, a method of matching an impedance is disclosed. An impedance matching network is coupled between a radio frequency (RF) source and a plasma chamber. The matching network includes a variable reactance element (VRE) having different positions for providing different reactances. The RF source has an RF source control circuit carrying out a power control scheme to control a power delivered to the matching network. Based on a determined parameter, a new position for the VRE is determined to reduce a reflected power at the RF input of the matching network. The matching network provides a notice signal to the RF source indicating the VRE will be altered. In response to the notice signal, the RF source control circuit alters the power control scheme. While the power control scheme is altered, the VRE is altered to the new position.

In one embodiment, a method of using an impedance matching network to determine a plasma chamber characteristic is disclosed. An impedance matching network is coupled between a radio frequency (RF) source and a plasma chamber. The matching network includes a variable reactance element (VRE) having different positions for providing different reactances. A characteristic of the plasma chamber is determined based on reference values for a parameter of the matching network and a current value. Based thereon, either a visual or audible indication of the determined characteristic of the plasma chamber is provided, or an action is taken to address the determined characteristic.

Impedance matching network for diagnosing plasma chamber

In one embodiment, a method, a method of manufacturing a semiconductor is disclosed. A monitored semiconductor manufacturing system (monitored system) is operated over a period of time, the monitored system comprising an impedance matching network coupled between a radio frequency (RF) source and a plasma chamber. First values for a parameter of the monitored system are received, the first values comprising different values for the parameter over the time period of operation of the monitored system, and a learning model is trained using the first values for the parameter. A substrate is then placed in a plasma chamber of a controlled semiconductor manufacturing system (controlled system). A characteristic of the controlled system is determined using a current value of the parameter and the trained learning model. An action is then taken upon the controlled system to address the determined characteristic.

Semiconductor manufacturing using artificial intelligence

In one embodiment, a method of impedance matching and controlling the power delivered to a plasma chamber is disclosed. A matching network includes a variable reactance element (VRE), the VRE having different positions for providing different reactances. Based on a determined parameter, the method determines potential new positions for the VRE that would have a threshold effectiveness in providing an impedance match between the RF source and the plasma chamber. A preferred position for the VRE is determined by determining the one of the potential new positions meeting the threshold effectiveness whose efficiency in delivering RF power from the RF input to the RF output would cause an RF power at the RF output to be closest to a desired RF power.

Impedance matching network and method

In one embodiment, an impedance matching network includes a mechanically variable capacitor (MVC), a second variable capacitor, and a control circuit. The control circuit carries out a first process of determining a second variable capacitor configuration for reducing a reflected power at the RF source output, and altering the second variable capacitor to the second variable capacitor configuration. The control circuit also carries out a second process of determining an RF source frequency, and, upon determining that the RF source frequency is outside, at a minimum, or at a maximum of a predetermined frequency range, determining a new MVC configuration to cause the RF source frequency, according to an RF source frequency tuning process, to be altered to be within or closer to the predetermined frequency range. The determination of the new MVC configuration is based on the RF source frequency and the predetermined frequency range.

In one embodiment, the present disclosure is directed to an RF impedance matching network that includes an electronically variable capacitor (EVC) and a control circuit. The control circuit is coupled to a sensor configured to detecting an RF parameter. To cause an impedance match between an RF source and a plasma chamber, the control circuit determines, using a match lookup table with a value based on the detected RF parameter, a match combination of a new EVC configuration for providing a new EVC capacitance, and a new source frequency for the RF source. The control circuit then alters the EVC to the new EVC configuration, and alters the variable frequency of the RF source to the new source frequency.

Impedance matching using electronically variable capacitance and frequency considerations

In one embodiment, a method of matching an impedance is disclosed. A matching network includes an electronically variable reactance element (EVRE) comprising discrete reactance elements and corresponding switches. For a determined parameter, potential new positions for the EVRE are determined, the potential new positions having differing effectiveness in causing an impedance match between an RF source and a plasma chamber. The discrete reactance elements of the EVRE that are currently restricted from switching are determined. A preferred position for the EVRE is determined as being the one of the potential new positions that provides greatest effectiveness in providing an impedance match while also not requiring switching in or out of any of the discrete reactance elements that are currently restricted from switching.

In one embodiment, the present disclosure may be directed to a method for impedance matching. A matching network is positioned between a radio frequency (RF) source and a plasma chamber. The RF source is configured to provide at least two non-zero pulse levels, and the matching network includes at least one electronically variable capacitor (EVC) configured to alter its capacitance to provide a match configuration. For each of the pulse levels, at a regular time interval, the method determines a first parameter value for a first parameter related to the plasma chamber or matching network. For each of the pulse levels, the method carries out a separate matching process based on the determined parameter values for the pulse level.

In one embodiment, an RF impedance matching network utilizing at least one electronically variable capacitors (EVC) is disclosed. Each EVC includes discrete capacitors operably coupled in parallel, the discrete capacitors including fine capacitors and coarse capacitors. A control circuit determines a parameter related to the plasma chamber and, based on the parameter, determines which of the coarse capacitors and which of the fine capacitors to have switched in to cause an impedance match. The increase of the variable total capacitance of each EVC is achieved by switching in more of the coarse capacitors or more of the fine capacitors than are already switched in without switching out a coarse capacitor that is already switched in.

RF impedance matching circuit and systems and methods incorporating same

In one embodiment, a switching circuit includes an electronic switch comprising one or more diodes for switching a reactance element within an electronically variable reactance element. A first power switch receives an input signal and a first voltage, and switchably connects the first voltage to a common output in response to the received input signal. A second power switch receives an input signal and a second voltage, and switchably connects the second voltage to the common output in response to the received input signal. The second voltage is opposite in polarity to the first voltage. The first power switch and the second power switch asynchronously connect the first voltage and the second voltage, respectively, to the common output, the one or more diodes of the electronic switch being switched according to the first voltage or the second voltage being connected to the common output.

Growing community of inventors

Moorestown, NJ, United States of America

Imran Ahmed Bhutta