Micro C Technologies, Inc.

Other

Hitachi-kokusai Electric Inc.

Kokusai Semiconductor Equipment Corporation

Imad Mahawili

John Michael Arend

An apparatus and method and processing a semiconductor substrate that controls heating of the substrate to thereby control the depth of the junctions formed by impurities implanted in the semiconductor substrate by heating a device side of the semiconductor substrate to a reference temperature and heating the device side of the semiconductor substrate to a heat activation temperature that is greater than the reference temperature for an activation period, which provides sufficient energy to activate the impurities so that they become part of the lattice structure of the substrate while minimizing diffusion of the impurities across the substrate and reducing the temperature gradient in the substrate to minimize stress in the substrate.

Ultra fast rapid thermal processing chamber and method of use

A method of fabricating a semiconductor device includes providing a semiconductor substrate, forming an oxide layer in the substrate, and adding nitrogen atoms on top of the exposed surface of the oxide film to form a diffusion barrier.

Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication

A reactor for processing a semiconductor substrate includes a reactor housing which defines a processing chamber, and at least one gas injecting assembly. The processing chamber is adapted to support a semiconductor substrate therein. The gas injection assembly injects at least one gas into the processing chamber and onto the substrate and is adapted to ionize the gas injection into the processing chamber to increase the reactivity of the gas with the substrate to thereby enhance the processing of the semiconductor substrate. In preferred form, the gas is ionized into a gas plasma. For example, the gas injection assembly may include a gas plasma generator which ionizes the gas with an electromagnetic field. Preferably, the gas plasma generator ionizes the gas exteriorly of the processing chamber to isolate the substrate from the plasma generator. The gas injection assembly further includes one or more injection tubes, preferably quartz tubes, with each tube including a plurality of orifices through which the ionized gas is delivered into the processing chamber.

Reactor with remote plasma system and method of processing a semiconductor substrate

An apparatus for chemical synthesis or chemical abatement is disclosed which includes a processing chamber and a secondary chamber which is in communication with the processing chamber. The processing chamber is configured to generate an arc in the processing chamber. A magnetic field generator, such as an energized coil or permanent magnet, generates a magnetic field in the processing chamber, which induces the arc generated in the processing chamber to rotate. The apparatus further includes at least one injection port for introducing at least one waste medium into the processing chamber and into the rotating arc whereby the rotating arc transforms the waste medium into a plasma resulting in a disassociation of the chemical constituents comprising the waste medium which thereafter flow into the secondary chamber. The secondary chamber is configured to quench the plasma products when the plasma is in the secondary chamber to maintain the disassociation and thereby reduce the reactivity of the chemical constituents thereby abating the waste medium. In other aspects, two or more mediums are introduced into the rotating arc which transforms the mediums into plasma thereby raising the energy of the mediums which causes the plasma products to become associated to thereby form a desired compound. In this aspect, the secondary chamber is configured to quench the associated plasma products when the plasma products are in the secondary chamber to maintain the association and thereby synthesize the desired compound.

Rotating arc plasma jet and method of use for chemical synthesis and chemical by-products abatements

A processing reactor for processing semiconductor substrates includes a reactor housing, which defines a processing chamber, and a platform which is rotatably supported in the reactor housing for supporting a substrate in the processing chamber. The processing reactor further includes a gas injection assembly which is adapted to inject at least one gas into the processing chamber. The gas injection assembly has a substrate facing surface, which is adapted to vary the dynamic pressure in the processing chamber to vary the processing time of the semiconductor substrate in the processing chamber. For example, gas injection assembly may include a gas injection manifold, which includes the substrate facing surface. Preferably the substrate facing surface is repositionable in the processing chamber to vary the dynamic pressure in said processing chamber.

Rectilinear wedge geometry for optimal process control in chemical vapor deposition and rapid thermal processing

A platform for supporting a semiconductor substrate during processing in a processing chamber includes a body having a first support surface for supporting the substrate thereon and a second support surface for being supported by a rotatable housing over a heater in the processing chamber. The body comprises a quartz material, with at least a portion of the quartz material being adapted to be opaque to block transmission of photon energy through that portion during heating. For example, the quartz material may include a coating over at least a portion of the quartz material, with the coating adapting the quartz material to be opaque. In preferred form, the coating comprises a composite film of silicon and silicon carbide.

Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing

A heating assembly for heating a semiconductor substrate in a processing chamber of a reactor includes a plurality of heater supports and a plurality of heating devices supported by the heater supports. The heater supports provide conductive paths for the heating devices for coupling the heating devices to an external power source and, further, are adapted to cool the heating devices whereby the heating devices may be operated at a high power output while maintaining the temperature of the heating devices below a maximum temperature. Preferably the heater supports are cooled by a coolant system, for example a coolant system which circulates coolant through at least a portion of the heater supports to thereby cool the heater supports and the heating devices.

Water cooled support for lamps and rapid thermal processing chamber

A platform for processing a substrate includes a first member and a second member. The first member includes a first support surface for supporting the substrate during processing. The second member includes a second support surface, which supports the first member thereon, and a third support surface, which is adapted to be supported in a processing chamber. The first and second members are releasably coupled together in a manner which permits unrestrained relative thermal expansion of the two members and also of the substrate. The platform is suitable for use in a processing reactor which includes a heater housing and an outer reactor housing. The heater housing encloses a heater assembly and provides a surface for supporting the platform during processing. The reactor also includes a gas injector for injecting at least one processing gas into the processing chamber for deposition on the substrate.

Substrate platform for a semiconductor substrate during rapid high

A platform for processing a substrate in a processing chamber of a reactor includes an annular body with a recessed, generally planar substrate support surface for supporting the substrate during processing. The platform includes at least one coupler for releasably securing the platform to a platform support surface positioned inside the processing chamber. The platform is releasably secured to the platform support surface in the processing in a manner which permits unrestrained relative thermal expansion of the platform. The substrate support surface is sized to permit unrestrained radial thermal expansion of the substrate and, preferably, recessed to support the device side of the substrate substantially flush with an upper surface of the platform. The platform is suitable for use in a processing reactor which includes a heater housing and an outer reactor housing. The heater housing encloses a heater assembly and provides the support surface for supporting the platform during processing. The reactor also includes at least one gas injector for injecting at least one processing gas into the processing chamber for deposition on the substrate.

Platform for supporting a semiconductor substrate and method of

A heating assembly for heating semiconductor substrates includes a plurality of heating devices, with each heating device including an energy emitting filament adapted for electrically coupling to an external power supply and housed in a first enclosure. The first enclosure comprises energy transmitting material so that energy generated by the filament will be transmitted through the enclosure. A second enclosure houses the first enclosure, which also comprises energy transmitting material. The second enclosure is coated with a reflective layer and is housed in a third enclosure of transmitting material, which encapsulates the reflective coating so that when the energy emitting filament is energized, the reflective coating is contained in the heating device. A heating assembly includes a frame having a plurality of supports for supporting a plurality of the heating devices. The heating devices are arranged in at least two heating zones, a first of the heating zones for heating a peripheral region of the semiconductor substrate and a second of the heating zones heating central regions of the semiconductor substrate. A first group of heating devices forming the first heating zone are spaced a first distance from the substrate. A second group of heating devices forming the second heating zone are spaced a second distance from the substrate wherein the first distance is less than the second distance so that more energy is directed to the peripheral regions of the substrate that the central regions.

Rapid thermal processing heater technology and method of use

A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables. A method of processing a semiconductor substrate includes supporting the substrate in a sealed processing chamber. The substrate is rotated and heated in the processing chamber in which at least one reactant gas is injected. A photon density sensor for measuring the temperature of the substrate is positioned in the processing chamber and is first directed to a light, which is provided in the chamber, for measuring the incident photon density from the light and then repositioned to direct the photon density sensor to the substrate to measure the reflection of the light off the substrate. The incident photon density is compared to the reflected light to calculate the substrate temperature.

Reactor and method of processing a semiconductor substate

A fluid replacement apparatus for use with a portable body heating and cooling system is provided. The apparatus includes a frame with a support portion configured for supporting a reservoir of the portable body heating and cooling system. A heat exchange mechanism is retained in the frame. The heat exchange mechanism includes a thermostatically controlled receptacle for maintaining fluid circulating through the receptacle at a desired temperature. A cover member covers the reservoir to releasably couple the fluid replacement apparatus to the portable body heating and cooling system. The cover member includes a pump for circulating fluid between the heat exchange mechanism and the reservoir of the portable body heating and cooling system. Return and supply tubes extend between the cover member and the heat exchange mechanism. The supply tube is coupled to the pump land to a receptacle of the heat exchange mechanism for circulating fluid from the reservoir to the receptacle. The return tube is coupled to the receptacle and extends through the cover member for circulating fluid from the receptacle to the reservoir at the desired temperature, for maintaining the temperature of the fluid in the reservoir at the desired temperature.

Fluid replacement apparatus for use with a portable heating and cooling

A thermal pad for use with a portable body heating/cooling system and method of use wherein the system includes a reservoir for hot/cold fluid, supply and return tubes for connecting the reservoir with the pad, pump means for continually circulating fluid between the reservoir and the pad and suitable controls, the thermal pad comprising a single corrugated tube including connectors for connection with the supply and return tubes, the single corrugated tube being folded on itself to form at least parallel passes providing a treatment surface for the pad, a cover extending transversely of the tube passes opposite the treatment surface, strips for securing the ends of the tube passes to the cover and straps for securing the pad in place on the treatment area. Preferably, controls for the thermal pad in combination with the other components of the heating/cooling system include a power supply, a time delay control for selectively establishing respective on and off cycle times and more preferably a battery for portable operation of the system.

Thermal pad for portable body heating/cooling system and method of use

A portable body heating/cooling system and method of use are provided for thermal treatment of selected body portions such as joints, muscles and the like, a reservoir being insulated for containing hot/cold fluid, an elongated and flexible thermal pad having one surface formed by conductive and flexible tubular conduits for conforming to the selected body portion and for producing thermal treatment by the flow of fluid through the tubular conduits, the tubular conduits being connected with the reservoir by non-collapsible supply and return tubes, and a pump preferably battery operated and preferably located in the reservoir for continually circulating fluid from the reservoir through the tubular conduits and back to the reservoir, the thermal pad being equipped with a retainer for securing the thermal pad in contact with the selected body portion, the supply and return tubes preferably being accordion-like in configuration to assure constant circulation of fluid through the thermal pad, the conduit also preferably being corrugated.

Growing community of inventors

Grand Rapids, MI, United States of America

Imad Mahawili