Lg Display Co., Ltd.

Im-Kuk Kang

Dae-Won Kim

Hyun-Sik Seo

Jong-Uk Bae

Jung-Woo Ha

Joon-Soo Han

An organic light-emitting display device comprises a substrate comprising a plurality of sub-pixels, each of the sub-pixels having an emission area and a non-emission area provided to surround the emission area; an auxiliary line disposed in the non-emission area; a first insulating film having a first hole configured to expose a portion of the auxiliary line; an auxiliary line connection pattern disposed on the first insulating film having a protruding portion protruding towards a center of the first hole and overlapping the auxiliary line; at least one bump disposed on the auxiliary line within the first hole and adjacent to the protruding portion of the auxiliary line connection pattern; and a bank having a second hole larger than the first hole to expose the protruding portion of the auxiliary line connection, thereby lowering resistance of a cathode covering a plurality of sub-pixels and preventing lateral current leakage between the sub-pixels through a change of the connection structure between the auxiliary line and the cathode.

Organic light-emitting display device

Disclosed are a liquid crystal display device employing an amorphous zinc oxide-based semiconductor as an active layer, and a method for fabricating the same, whereby device stability can be secured by employing an etch stopper structure and device characteristics can be enhanced by minimizing exposure and deterioration of the active layer excluding content regions by virtue of the design of the etching stopper in a shape like 'H'. Also, the liquid crystal display device and the fabrication method thereof can further form a semiconductor pattern and an insulating layer pattern on the intersection between the gate line and the data line, so as to compensate a stepped portion, thereby preventing an occurrence of short-circuit.

Liquid crystal display device and method for fabricating the same

A display device including an oxide thin film transistor (TFT) is disclosed. A nitride-based gate insulating layer of a gate pad area is etched when an oxide semiconductor layer of a pixel area is etched by using a half-tone mask, a metal layer is formed at a contact hole of the etched gate insulting layer, and then a passivation layer formed thereon is etched. Thus, an overhang of the passivation layer can be prevented from being generated when the gate insulating layer is etched, and accordingly, the fabrication process can be simplified.

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Seoul, South Korea

Im-Kuk Kang