Invensense, Inc.

Ilya Gurin

Joseph Seeger

Steven Saeed Nasiri

Matthew Julian Thompson

Hasan Akyol

Vadim M Tsinker

Karthik Katingari

Michael J Dueweke

Goksen G Yaralioglu

Leonardo Baldasarre

Stephen Lloyd

Igor Tchertkov

Joe Seeger

Matthew Thompson

A gas sensor includes a plurality of sensing resistors that vary in resistance based on ambient temperature and the presence of certain gases, such as COand HO. The responses of each of the sensing resistors vary based on a base temperature of each of the sensing resistors. The base temperatures for each of the sensing resistors and configurations of the sensing resistors are selected to emphasize a response to a gas of interest (e.g., CO) while de-emphasizing or canceling contributions from ambient temperature and gases that are not of interest (e.g., HO).

Multi-temperature gas sensing

The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

Sensor misalignment measuring device

A medical device comprises a surface, an ultrasonic sensor, and a processor. The surface is configured to interact with skin of a patient during operation of the medical device. The ultrasonic sensor is disposed beneath the surface and configured to ultrasonically measure data with respect to a region above the surface. The processor is coupled with the ultrasonic sensor. Responsive to detection of a finger in contact with the surface, the processor is configured to operate the ultrasonic sensor to capture a fingerprint of the finger. Responsive to authentication that a person associated with the captured fingerprint is authorized to use the medical device, the processor is configured to activate operation of the medical device.

Medical device with integrated ultrasonic authentication

The present invention relates to semiconductor devices, such as microelectromechanical (MEMS) devices, with improved resilience during manufacturing. In one embodiment, a MEMS device includes a MEMS structure; a substrate situated parallel to the MEMS structure and positioned a first distance from the MEMS structure; and a bump stop structure formed on the substrate between the substrate and the MEMS structure, wherein the bump stop structure substantially traces a perimeter of the substrate, wherein the bump stop structure extends from the substrate to a second distance from the MEMS structure, and wherein the second distance is greater than zero and less than the first distance.

Semiconductor device with patterned contact area

A microelectromechanical (MEMS) device may be coupled to a dielectric material at an upper planar surface or lower planar surface of the MEMS device. One or more temperature sensors may be attached to the dielectric material layer. Signals from the one or more temperature sensors may be used to determine a thermal gradient along on axis that is normal to the upper planar surface and the lower planar surface. The thermal gradient may be used to compensate for values measured by the MEMS device.

Package level thermal gradient sensing

In-plane sensor misalignment measuring device using capacitive sensing

A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.

MEMS sensor compensation for off-axis movement

The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor device; sensing an electrical property of one or more second electrodes associated with a second conductive layer of the semiconductor device in response to applying the input voltage to the respective ones of the one or more first electrodes; and calculating a misalignment between the first conductive layer of the semiconductor device and the second conductive layer of the semiconductor device in an in-plane direction as a function of the electrical property of the one or more second electrodes.

A system and/or method for utilizing mechanical motion limiters to control proof mass amplitude in MEMS devices (e.g., MEMS devices having resonant MEMS structures, for example various implementations of gyroscopes, magnetometers, accelerometers, etc.). As a non-limiting example, amplitude control for a MEMS gyroscope proof mass may be accomplished during normal (e.g., steady state) gyroscope operation utilizing impact stops (e.g., bump stops) of various designs. As another non-limiting example, amplitude control for a MEMS gyroscope proof mass may be accomplished utilizing non-impact limiters (e.g., springs) of various designs, for example springs exhibiting non-linear stiffness characteristics through at least a portion of their normal range of operation.

MEMS device mechanical amplitude control

In accordance with an example embodiment of this disclosure, a micro-electro-mechanical system (MEMS) device comprises a substrate, a CMOS die, and a MEMS die, each of which comprises a top side and a bottom side. The bottom side of the CMOS die is coupled to the top side of the substrate, and the MEMS die is coupled to the top side of the CMOS die, and there is a cavity positioned between the CMOS die and the substrate. The cavity may be sealed by a sealing substance, and may be filled with a filler substance (e.g., an adhesive) that is different than the sealing substance (e.g., a gaseous or non-gaseous substance). The cavity may be fully or partially surrounded by one or more downward-protruding portions of the CMOS die and/or one or more upward-protruding portions of the substrate.

MEMS cavity substrate

A package combining a MEMS substrate, a CMOS substrate and another MEMS substrate in one package that is vertically stacked is disclosed. The package comprises a sensor chip further comprising a first MEMS substrate and a CMOS substrate with a first surface and a second surface and where the first MEMS substrate is attached to the first surface of the CMOS substrate. The package further includes a second MEMS substrate with a first surface and a second surface, where the first surface of the second MEMS substrate is attached to the second surface of the CMOS substrate and the second surface of the second MEMS substrate is attached to a packaging substrate. The first MEMS substrate, the CMOS substrate, the second MEMS substrate and the packaging substrate are provided with electrical inter-connects.

MEMS-CMOS-MEMS platform

An example system comprises a microelectromechanical system (MEMS) sensor, a strain gauge, and a strain compensation circuit. The MEMS sensor is operable to generate a sensor output signal that corresponds to a sensed condition (e.g., acceleration, orientation, and/or pressure). The strain gauge is operable to generate a strain measurement signal indicative of a strain on the MEMS sensor. The strain compensation circuit is operable to modify the sensor output signal to compensate for the strain based on the strain measurement signal. The strain compensation circuit stores sensor-strain relationship data indicative of a relationship between the sensor output signal and the strain measurement signal. The strain compensation circuit is operable to use the sensor-strain relationship data for the modifying of the sensor output signal. The modification of the sensor output signal comprises one or both of: removal of an offset from the sensor signal, and application of a gain to the sensor signal.

MEMS sensor offset compensation with strain gauge

A MEMS sensor is disclosed. The MEMS sensor includes a MEMS structure and a substrate coupled to the MEMS structure. The substrate includes a layer of metal and a layer of dielectric material. The MEMS structure moves in response to an excitation. A first over-travel stop is formed on the substrate at a first distance from the MEMS structure. A second over-travel stop on the substrate at a second distance from the MEMS structure. At least one electrode on the substrate at a third distance from the MEMS structure. The first, second and third distances are all different.

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Mountain View, CA, United States of America

Ilya Gurin