Samsung Electronics Co., Ltd.

Ilwoo Kim

Hwanyeol Park

Sejin Kyung

Minwoo Lee

Sungmin Ahn

Heangsu Kim

Daewee Kong

Yeongseon Kim

Jongyoung Park

Yongdeok Lee

Philippe Coche

Youngho Jeung

Songyi Baek

A method for operating an electronic device including at least one communication circuit and a display include receiving, via a connection from another electronic device, data that is encrypted based on scan of the barcode through a camera of the other electronic device. The method include executing the initial setup based on at least one signal received from the other electronic device after authenticating the other electronic device by using the data.

Electronic device, method, and non-transitory computer-readable storage media for executing setup via communication with another device

In a method of manufacturing a semiconductor device, a first insulation layer and a first sacrificial layer are alternately and repeatedly formed on a substrate to form a mold layer. A sacrificial layer structure is formed on the mold layer to include an etch stop layer and a second sacrificial layer sequentially stacked. After forming a hard mask on the sacrificial layer structure, the sacrificial layer structure and the mold layer are etched by a dry etching process using the hard mask as an etching mask to form a channel hole exposing an upper surface of the substrate and form a recess on a sidewall of the second sacrificial layer adjacent to the channel hole. A memory channel structure is formed in the channel hole. The first sacrificial layer is replaced with a gate electrode.

Methods of manufacturing a semiconductor device

Provided is a semiconductor device. The semiconductor device includes a wafer; an etch stop layer on the wafer; a lower mold layer on the etch stop layer; an intermediate supporter layer on the lower mold layer; an upper mold layer on the intermediate supporter layer; an upper supporter layer on the upper mold layer; and a hard mask structure on the upper supporter layer, wherein the hard mask structure includes a first hard mask layer on the upper supporter layer and a second hard mask layer on the first hard mask layer, one of the first hard mask layer and the second hard mask layer includes a first organic layer including a SOH containing C, H, O, and N, and the other one of the first hard mask layer and the second hard mask layer includes a second organic layer including an SOH containing C, H, and O.

Semiconductor device including hard mask structure with repeating spin-on hard mask layers

Growing community of inventors

Yongin-si, South Korea

Ilwoo Kim