Samsung Electronics Co., Ltd.

Ilsuk Park

Kwangil Shin

Jongmin Kim

Junghoon Kim

Chungsam Jun

Suyoung Lee

Doyoung Yoon

A substrate inspection method includes: (i) acquiring a plurality of defect of interest (DOI) images of a substrate having a DOI, under a corresponding plurality of different optical conditions, (ii) acquiring a plurality of DOI difference images from differences between the plurality of DOI images and a reference image, and (iii) acquiring a plurality of DOI difference-of-difference (DOD) images from differences between the plurality of DOI difference images. The method also includes setting two optical conditions corresponding to a DOI DOD image having the highest signal-to-noise ratio (SNR) among the plurality of DOI DOD images, as a first optical condition and a second optical condition, and acquiring a first image of the substrate under the first optical condition and a second image of the substrate under the second optical condition. A first difference image is also acquired, which is a difference between the first image and the reference image, and a second difference image is acquired, which is a difference between the second image and the reference image. A DOD image is acquired that is a difference between the first difference image and the second difference image. A low-SNR defect candidate region is then detected from the first difference image, the second difference image, and the DOD image.

Substrate inspection method and device

An inspection apparatus and a method of inspecting a semiconductor device are disclosed. The inspection apparatus includes a stage on which a semiconductor device is positioned, a first light source irradiating a high-frequency light onto an inspection area of the semiconductor device to reduce a potential barrier of a PN junction in the semiconductor device, a beam scanner arranged over the semiconductor device and irradiating a charged particle beam onto the inspection area of the semiconductor device to generate secondary electrons, and a defect detector generating a detection image corresponding to the inspection area and detecting, based on a voltage contrast between a reference image and a plurality of detection images, a defect image indicating a defect in the semiconductor device from among the plurality of detection images.

Inspection apparatus for inspecting semiconductor devices using charged particles

Growing community of inventors

Hwaseong-si, South Korea

Ilsuk Park