Samsung Electronics Co., Ltd.

Ilmok Park

Seulji Song

Ji-Hyun Jeong

Kyusul Park

Gwanhyeob Koh

Sungwon Kim

Kilho Lee

Junhee Lim

Si-Ho Song

Junghoon Park

Sung-Ho Eun

Kwang-woo Lee

Gwang-Hyun Baek

Daehwan Kang

Woohyun Park

A three-dimensional semiconductor memory device may include a first conductive line extending in a first direction, a second conductive line extending in a second direction crossing the first direction, a cell stack at an intersection of the first and second conductive lines, and a gapfill insulating pattern covering a side surface of the cell stack. The cell stack may include first, second, and third electrodes sequentially stacked, a switching pattern between the first and second electrodes, and a variable resistance pattern between the second and third electrodes. A top surface of the gapfill insulating pattern may be located between top and bottom surfaces of the third electrode.

Three-dimensional semiconductor memory devices

Disclosed is a semiconductor device including first conductive lines, second conductive lines crossing the first conductive lines, and memory cells at intersections between the first conductive lines and the second conductive lines. Each of the memory cells includes a magnetic tunnel junction pattern, a bi-directional switching pattern connected in series to the magnetic tunnel junction pattern, and a conductive pattern between the magnetic tunnel junction pattern and the bi-directional switching pattern.

Semiconductor device having first memory section and second memory section

A variable resistance memory device and a method of fabricating a variable resistance memory device, the device including first conductive lines extending in a first direction; second conductive lines extending in a second direction crossing the first direction; and memory cells at respective intersection points of the first conductive lines and the second conductive lines, wherein each of the memory cells includes a switching pattern, an intermediate electrode, a variable resistance pattern, and an upper electrode, which are between the first and second conductive lines and are connected in series; and a spacer structure including a first spacer and a second spacer, the first spacer being on a side surface of the upper electrode, and the second spacer covering the first spacer and a side surface of the variable resistance pattern such that the second spacer is in contact with the side surface of the variable resistance pattern.

Variable resistance memory device and method of fabricating the same

A variable resistance memory device includes a substrate. A first conductive line is disposed on the substrate and extends primarily in a first direction. A second conductive line is disposed on the substrate and extends primarily in a second direction. The second direction intersects the first direction. A phase change pattern is disposed between the first conductive line and the second conductive line. A bottom electrode is disposed between the phase change pattern and the first bottom electrode includes first a first sidewall segment that connects the first conductive line and the phase change pattern to each other. The phase change pattern has a width in the first direction that decreases toward the substrate. The first sidewall segment has a first lateral surface and a second lateral surface that face each other. A lowermost portion of the phase change pattern is disposed between the first lateral surface and the second lateral surface.

A variable resistance memory device includes a word line extending in a first direction, a bit line on the word line and extending in a second direction intersecting the first direction, a switching pattern between the bit line and the word line, a phase change pattern between the switching pattern and the word line, and a bottom electrode between the phase change pattern and the word line, wherein the phase change pattern has a bottom area greater than a top area of the bottom electrode, a thickness of the phase change pattern being greater than a thickness of the bottom electrode, and wherein the bottom and top areas are defined in the first and second directions, and the thicknesses are defined in a third direction intersecting the first and second directions.

Variable resistance memory device

Disclosed are a variable resistance memory device and a method of manufacturing the same. The device comprises a first conductive line extending in a first direction, a second conductive line extending in a second direction intersecting the first direction, a memory cell at an intersection between the first conductive line and the second conductive line, a first electrode between the first conductive line and the memory cell, and a second electrode between the second conductive line and the memory cell. The memory cell comprises a switching pattern, an intermediate electrode, a first resistivity control pattern, and a variable resistance pattern that are connected in series between the first conductive line and the second conductive line. Resistivity of the first resistivity control pattern is less than resistivity of the second electrode.

Variable resistance memory device and method of manufacturing the same

A semiconductor device includes first conductive lines, second conductive lines crossing the first conductive lines, and memory cells at intersections between the first conductive lines and the second conductive lines. Each of the memory cells includes a magnetic tunnel junction pattern, a bi-directional switching pattern connected in series to the magnetic tunnel junction pattern, and a conductive pattern between the magnetic tunnel junction pattern and the bi-directional switching pattern.

Semiconductor device having magnetic tunnel junction pattern

Variable resistance memory devices and methods of forming the same are provided. The variable resistance memory devices may include a substrate including a cell region and a peripheral region, first conductive lines on the substrate, second conductive lines traversing the first conductive lines, variable resistance structures at intersecting points of the first conductive lines and the second conductive lines, and bottom electrodes between the first conductive lines and the variable resistance structures. The cell region may include a boundary region contacting the peripheral region, and one of the first conductive lines is electrically insulated from one of the variable resistance structures that is on the boundary region and overlaps the one of the first conductive lines.

Variable resistance memory devices and methods of forming the same

Variable resistance memory devices are provided. A variable resistance memory device includes first and second conductive lines, and a variable resistance material and a switching element between the first and second conductive lines. The switching element includes first and second portions that extend and/or face in different first and second directions, respectively. Methods of manufacturing a variable resistance memory device are also provided.

Variable resistance memory devices and methods of manufacturing the same

A variable resistance memory device may include a word line extending in a first direction, a bit line extending in a second direction crossing the first direction, a phase-changeable pattern provided between the word line and the bit line, a bottom electrode provided between the phase-changeable pattern and the word line, and a spacer provided on a side surface of the bottom electrode and between the phase-changeable pattern and the word line. The bottom electrode may include a first portion and a second portion, and the second portion is provided between the first portion and the spacer. The first and second portions of the bottom electrodes may have different lengths from each other in the second direction.

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Seoul, South Korea

Ilmok Park