Siltron, Inc.

Ill Soo Choi

Sang Hee Kim

Young Ho Hong

Man Seok Kwak

Hong Woo Lee

Hyun Kyo Choi

Bong Mo Park

The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby vacancy defect density and distribution are uniformly controlled. A single-crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20&#xb0; C./cm in the temperature range of 1000 to 1100&#xb0; C.

Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same

A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus includes a quartz crucible containing molten silicon liquid, a heating unit supplying the quartz crucible with a radiant heat, a crystal pulling lifter pulling up a silicon single crystal from a molten silicon liquid contained in the quartz crucible, and a low melting point dopant feeding instrument. The low melting point dopant feeding instrument includes a sidewall portion, an upper portion, and an open bottom portion with net-like structure having many holes, the sidewall and upper portions being vacuum-tight sealed. The method includes the steps of loading a low melting point dopant inside a low melting point dopant feeding instrument having vacuum-tight sealed sidewall and upper portions and an open bottom portion with net-like structure having many holes, and dipping the bottom portion of the low melting point dopant feeding instrument in a molten silicon liquid contained inside a quartz crucible. The low melting point dopant is directly dissolved in the molten silicon liquid or evaporated and then finally dissolved in the form of a gas phase into the molten silicon liquid through the open holes of the bottom portion of the melting point dopant feeding instrument.

Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and the low melting point dopant feeding method thereof

Disclosed are a coating material for absorbing radiant heat, forming method thereof, a radiant heat cooling apparatus using the same, and an apparatus for growing a silicon single crystal using the same. The radiant heat absorbing coating material includes 10&tilde;15 wt/% of silica gel, 5&tilde;10 Wt/% of graphite powder, and 75&tilde;85 wt/% of IPA, and is formed by agitation. An ingot growing apparatus includes a quartz crucible, a heating element, a crystal pulling device, a heat shield for maintaining a constant temperature distribution in the crystal growing system, and a cooling device, wherein the quartz crucible, heating element, crystal pulling device, heat shield, and cooling device are installed inside a sealed furnace or a sealed crystal growing apparatus, wherein the silicon single crystal growing apparatus further comprises a crystal cooling means for cooling the growing crystal by absorbing radiant heat radiating from the silicon crystal, and wherein the crystal cooling means includes a circulating cooling pipe inside and an ingot radiant heat absorbing layer coated on an outer surface of the cooling means.

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Gumi, South Korea

Ill Soo Choi