Samsung Electro-mechanics Co., Ltd.

Industry-university Cooperation Foundation Hanyang University

Ill Kyoo Park

Sang Kyun Lee

Sang Soo Park

Young Ghyu Ahn

Sung Kwon Wi

Sung Ho Lee

Yong Suk Kim

Young Seuck Yoo

Dong Seok Park

Jung Eun Noh

Seung Heon Han

Chang Ryul Jung

Yeong Su Cho

Dong Sup Park

Hyuk Sun

Tae Yeoul Yun

Chan Seo Park

Myoung Gyun Kim

Zhe Jun Jin

Young Duk Yoo

The present invention discloses a filter for removing noise, which includes: a lower magnetic body; primary and secondary patterns spirally provided on the lower magnetic body in parallel to each other; an insulating layer for covering the primary and secondary patterns; and an upper magnetic body provided on the insulating layer, wherein the primary and secondary patterns are formed to have a ratio of vertical thickness (T) to horizontal width (W) of 0.27&#x2266;T/W&#x2266;2.4. According to the present invention, it is possible to improve performance and capacity by implementing high common-mode impedance in the same frequency and reduce manufacturing costs by simplifying structures and processes.

Filter for removing noise

There is provided an electric double layer capacitor including: an exterior case having a housing space provided therein and formed of insulating resin; first and second external terminals buried in the exterior case, each having a first surface exposed to the housing space and a second surface exposed to an outside of the exterior case; and a chip-type electric double layer capacitor cell disposed in the housing space and electrically connected to the first surface. The chip-type electric double layer capacitor cell includes first and second electrodes facing each other and having electricity of opposite polarities applied thereto, at least one induction electrode layer disposed between the first and second electrodes and having no electricity applied thereto, and first and second separators disposed between the first electrode and the induction electrode layer and between the second electrode and the induction electrode layer, respectively.

Electric double layer capacitor and method of manufacturing the same

There are provided a modeling circuit of a high-frequency device capable of providing a more accurate modeling circuit having a higher-order resonance by dividedly modeling an overlap zone and a non-overlap zone of the high-frequency device, and a modeling method thereof. The modeling circuit of a high-frequency device, which comprises an overlap zone where the two electrodes are overlapped with each other, a non-overlap zone where the overlap zone is absent between the two electrodes, the overlap and non-overlap zones being formed by stacking two or more electrodes on top of each other in a constant distance, and terminations electrically coupled with some parts of the two electrodes, comprises a first circuit block comprising a first capacitor and a first conductor that model the overlap zone of the high-frequency device on the basis of coupled transmission line theory; and a second circuit block comprising a first inductor and a first register that model the overlap zone of the high-frequency device on the basis of coupled transmission line theory and model the non-overlap zone and the terminations of the high-frequency device on the basis of a Series RL model.

Modeling circuit of high-frequency device and modeling method thereof

The present invention provides a chip type electric double layer capacitor including: a lower case having an internal space of which an upper surface is opened and an external terminal of which portions exposed to a bottom of the internal space and the outside are connected to each other; an electric double layer capacitor cell disposed in the internal space of the lower case to be electrically connected to the portion of the external terminal, which is exposed to the bottom of the internal space; and an upper cap mounted on the lower case to cover the internal space, and a method for manufacturing the same.

Chip type electric double layer capacitor and method for manufacturing the same

Growing community of inventors

Seoul, South Korea

Ill Kyoo Park