Applied Materials, Inc.

Ilias Iliopoulos

Shuo Na

Kelby Yancy

Chunsheng Chen

Aaron Muir Hunter

Wolfgang R Aderhold

Paul Zachary Wirth

Arulkumar P Shanmugasundram

Martin Jay Seamons

Alexander T Schwarm

Jallepally Ravi

Balasubramanian Ramachandran

Bo Zhang

Paul E Fisher

Mohsin Waqar

Todd J Brill

Alexander Parkhomovsky

Patrick L Smith

Charles Gregory Potter, Sr

Jose Albor

Songfu Jiang

Implementations disclosed describe an inspection device capable of being transferred by a robot blade into a processing chamber of a manufacturing machine, the inspection device comprising an optical sensor to detect light reflected from a target located within the processing chamber, wherein the optical sensor is to output, to a processing device, a signal representative of a state of a region of a surface of the target.

Methods and systems of optical inspection of electronic device manufacturing machines

In one embodiment of the invention, a method for predicting a susceptor's service life in a processing chamber is disclosed. The method begins by creating virtual sensors in a processing chamber having a susceptor. The virtual sensors monitor one or more parameters on the susceptor and the age of the susceptor is tracked throughout the susceptor's life in the processing chamber with the virtual sensors.

Determining susceptor service life in a plasma processing chamber

Systems and methods are provided for determining a clean endpoint time for a current run of a chamber. The clean endpoint time for the current run may be determined by determining that a chamber parameter, such as a chamber pressure, has stabilized. Historical clean endpoint time data is updated by adding the clean endpoint time for the current run of the chamber. A recommended clean endpoint time is then determined for the chamber based on the updated historical clean endpoint time data.

Method and system for identifying a clean endpoint time for a chamber

Embodiments presented herein provide techniques for controlling deposition processes in a process chamber based on monitoring contaminant gas levels in a chamber. Embodiments include generating a data model defining acceptable levels within the chamber for each of a plurality of gas types. Gas levels of the plurality of gas types within the chamber are monitored using one or more sensor devices within the chamber. Upon determining that at least one gas level within the chamber violates the acceptable level for the respective gas type within the data model, embodiments perform a corrective action for the chamber.

Chamber leak and gas contaimination detection

The present invention generally relates to a method for detecting the breakage of one or more grounding straps without stopping processing or opening the processing chamber for inspection. In one embodiment, a method for detecting grounding strap breakage in a processing chamber includes monitoring real-time RF related data from plasma generated in the processing chamber. The method also includes comparing the real-time RF related data with a pre-determined threshold RF related data. The method includes generating an alert if the real-time RF related data meets or exceeds the pre-determined threshold RF related data. In one embodiment, the RF related data includes RF frequency, direct current voltage, voltage peak-to-peak, and/or RF reflected power.

Detection of grounding strap breakage

Methods and apparatus for determining substrate integrity and alignment are described. Devices as described herein can include a transfer chamber, one or more process chambers, a loadlock chamber a first optical device, a second optical device and a radiation source positioned outside and above an opening for the loadlock chamber. Methods as described herein can include delivering a substrate to an opening in a process chamber, activating the optical device and the radiation source and capturing a plurality of images, extracting a substrate edge pattern from the plurality of images, comparing the substrate edge pattern to an expected edge pattern to determine a level of edge variance and adjusting or stopping a process if the level of edge variance is outside of an edge variation range.

Application of in-line glass edge-inspection and alignment check in display manufacturing

A method and apparatus for detecting substrate arcing and breakage within a processing chamber is provided. A controller monitors chamber data, e.g., parameters such as RF signals, voltages, and other electrical parameters, during operation of the processing chamber, and analyzes the chamber data for abnormal spikes and trends. Using such data mining and analysis, the controller can detect broken substrates without relying on glass presence sensors on robots, but rather based on the chamber data.

Detecting arcing using processing chamber data

Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a Virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.

Temperature uniformity measurement during thermal processing

A method of film deposition in a chemical vapor deposition (CVD) process includes (a) providing a model for CVD deposition of a film that defines a plurality of regions on a wafer and identifies one or more film properties for at least two regions of the wafer and at least one deposition model variable that correlates with the one or more film properties; (b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable; (c) measuring a film property of at least one of the one or more film properties for the deposited film of step (b) for each of the at least two regions of the wafer and determining a film property; (d) calculating an updated deposition model based upon the film property of step (c) and the model of step (a); and (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property. The method can be used to provide feedback to a plurality of deposition chambers or to control film properties other than film thickness.

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Foster City, CA, United States of America

Ilias Iliopoulos