Forschungszentrum Juelich Gmbh

Forschungszentrum Julich Gmbh

Rheinisch-westfaelische Technische Hochschule

Rheinisch-westfaelische Technisque Hochschule (rwth) Aachen

Rheinisch-westfaelische Technische Hochschule Aachen (rwth)

Rwth Aachen

Rheinisch-westfalische Technische Hochschule Aachen

Ilia Valov

Rainer M Waser

Eike Linn

Stefan Tappertzhofen

Lutz Nielen

Rainer Bruchhaus

Theodor Schneller

Roland Daniel Rosezin

Daniel Bick

Jan Van Den Hurk

Elke Linn

Florian Lentz

Disclosed is a biphasic electrically conductive perovskite-based mixed oxide of the structure ABOwith A=Ba, and B=Co, comprising additionally 5-45 at %, preferably 15 to 30 at %, particularly preferably 25 at % CoO(at % Co based on the total number of Co atoms in the perovskite ABOand 0.5 to 0.3 at %, preferably 1 to 2.5 at %, particularly preferably 2 at % (wherein the at % are referred to the total number of B cations in the perovskite ABO) Ti as dopant. Preferably, the mixed oxide has the stoichiometric formula BaCoTiO:CoOwith x=0.005 to 0.03, preferably x=0.01 to 0.025, particularly preferably x=0.02, wherein &#x3b4; defines the vacancies in the perovskite structure and is in the range of about 0.1 to 0.8, preferably 0.3 to 0.7, particularly preferably about 0.5 to 0.6. Further disclosed are a catalyst and an anode comprising the mixed oxide, the use of the catalyst in alkaline water electrolysis or in metal-air batteries, the use of the mixed oxide for the preparation of an anode for alkaline water electrolysis or metal-air batteries. Further, manufacturing processes for a precursor solution for the mixed oxide and for the inventive anode are disclosed, as well as an amorphous mixed oxide having a Co:Ba ratio of about 2:1 and a TTB (Tetragonal Tungsten-Bronze)-like near structure obtainable by using the mixed oxide according to the invention as catalyst in the oxygen evolution reaction of alkaline water electrolysis, whereby said amorphous product is formed by leaching out Ba.

Chemically resistant, oxidic electrocatalyst for oxygen evolution during alkaline water electrolysis

A method for reading out a resistive memory cell comprising two electrodes that are spaced from each other by an ion-conducting resistive material was developed, the memory cells being transferrable from a stable state having a higher resistance value (high resistive state, HRS) to a stable state having a lower resistance value (low resistive state, LRS) when a write voltage is applied. A read voltage is applied as a read pulse for reading out, wherein the number of ions driven through the ion-conducting resistive material during the pulse is set by way of the level and duration of the pulse in such a way, proceeding from the HRS state, they suffice for forming an electrically conducting path through the ion-conducting resistive material at least until the onset of a flow of current through this path, and thus for the transition into a metastable VRS state (volatile resistance state) having a reduced resistance value and a predefined relaxation time for return into the HRS state, but not for transition into the LRS state. In this way, it is ensured that, in all cases, the memory cell once is again in the same state after the read-out as it was prior to the read-out. This allows in particular memory elements that are composed of an antiserial circuit composed of two memory cells to be read out non-destructively, without this diminishing the option of implementing large arrays composed of these memory elements.

Method for reading out a resistive memory cell and a memory cell for carrying out the method

A method for reading out a non-volatile memory element having at least two stable states 0 and 1. This memory element comprises at least one resistive memory cell, which encodes the two states 0 and 1 into a state HRS having higher electrical resistance and a state LRS having lower electrical resistance. In the two states 0 and 1, the memory element has differing capacitances C; this difference is used to determine which state is present. A memory element is selected in which a fixed capacitance that is independent of the state of the memory cell is connected in series with the memory cell. A series connection of a resistive memory cell with a fixed capacitance, instead of with a second resistive memory cell, improves the signal strength during capacitive read-out. The second memory cell becomes indispensable for the memory function when the memory element is read out capacitively. Moreover memory elements were developed which combine a field effect transistor or a DRAM structure with a resistive memory cell or an antiserial series connection of such memory cells.

Method for capacitively reading resistive memory elements and nonvolatile, capacitively readable memory elements for implementing the method

A method for reading out a memory element comprises a series connection. of at least two memory cells A and B each have a stable state A0 or B0 having higher resistance and a stable state A1 or B1 having lower electrical resistance. An electrical variable of the series circuit is measured and an electrical variable is selected for this measurement, to which the memory cell A in state A0 makes a different contribution than the memory cell B in state B0 and/or to which the memory cell A instate A1 makes a different contribution than the memory cell B in state B1. The two state combinations A1 and B0 or A0 and B1 then result in differing values for the electrical variable that is measured by way of the series circuit. These state combinations can thus be distinguished from each other without having to change the logic state of the memory element during reading.

Method for nondestructively reading resistive memory elements

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Aachen, Germany

Ilia Valov