Applied Materials Israel Limited

Ilan Ben-Harush

Rafael Bistritzer

Roman Kris

Einat Frishman

Grigory Klebanov

Vadim Vereschagin

Elad Sommer

Elad Cohen

Sharon Duvdevani-Bar

Sahar Levin

Jannelle Anna Geva

Gal Daniel Gutterman

Omer Kerem

Asaf Golov

Victor Egorov

Tal Orenstein

Meir Vengrover

Noa Marom

Arundeepth Thamarassery

A system of examination of a semiconductor specimen, comprising a processor and memory circuitry (PMC) configured to:

Examination of a hole formed in a semiconductor specimen

There is provided a system and a method comprising obtaining data Dinformative of a contour of an element of a semiconductor specimen acquired by an examination tool, using the data Dto generate a signal informative of a curvature of the contour of the element, determining at least one of data Dinformative of a periodicity of the signal, or data Dinformative of a number of discontinuities in the signal, wherein each discontinuity is informative of a transition between a convex portion of the contour and a concave portion of the contour, and using at least one of the data Dor the data Dto determine data informative of correct manufacturing of the element.

Control of a manufacturing process using contour curvature analysis of specimens

There is provided a system of examination of a semiconductor specimen, comprising a processor and memory circuitry configured to obtain, for each given candidate defect of a plurality of candidate defects in an image of the specimen, a given area of the given candidate defect in the image, obtain a reference image, perform a segmentation of at least part of the reference image, to determine, for each given candidate defect, first reference areas in the reference image matching a given reference area corresponding to the given area, select among the first reference areas, a plurality of second reference areas, obtain a plurality of corresponding second areas in the image, and use data informative of a pixel intensity of the second areas and data informative of a pixel intensity of the given area to determine whether the given candidate defect corresponds to a defect.

Detection of defects using a computationally efficient segmentation approach

There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.

Local shape deviation in a semiconductor specimen

There is provided a system and method of generating a metrology recipe usable for examining a semiconductor specimen, comprising: obtaining a first image set comprising a plurality of first images captured by an examination tool, obtaining a second image set comprising a plurality of second images, wherein each second image is simulated based on at least one first image, wherein each second image is associated with ground truth data; performing a first test on the first image set and a second test on the second image set in accordance with a metrology recipe configured with a first parameter set, and determining, in response to a predetermined criterion not being met, to select a second parameter set, configure the metrology recipe with the second parameter set, and repeat the first test and the second test in accordance with the metrology recipe configured with the second parameter set.

Generating a metrology recipe usable for examination of a semiconductor specimen

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Tel Aviv, Israel

Ilan Ben-Harush