Hynix Semiconductor Inc.

Il-Young Kwon

Byung-Jun Park

Jong-Min Lee

Sung-Kwon Lee

Jin-Woong Kim

Jin-Ki Jung

Hyung-Bok Choi

Sang-Ik Kim

Kwang-Ok Kim

Dong-Sauk Kim

Ik-Soo Choi

Dong-Woo Shin

Myung-Kyu Ahn

Kuk-Han Yoon

Jae-Young Kim

Phil-Goo Kong

Ho-Seok Lee

Hyeong-Soo Kim

Jin-Sung Oh

Semiconductor devices and methods of manufacture thereof are disclosed that are capable of preventing a short of lower electrodes caused by a leaning or lifting phenomenon while forming the lower electrodes and securing enough capacitance of a capacitor by widening an effective capacitor area. The inventive semiconductor device includes: a plurality of capacitor plugs disposed in an orderly separation distance; and a plurality of lower electrodes used for a capacitor and disposed in an orderly separation distance to be respectively connected with the capacitor plugs.

Semiconductor device and method for fabricating the same

The present invention provides a method of fabricating a capacitor for a semiconductor device. The method includes: forming sequentially a lower electrode and a dielectric layer having a high dielectric constant over a semiconductor substrate which have gone through predetermined processes; forming sequentially a first metal layer and a poly-silicon layer over the dielectric layer; forming an upper electrode pattern by pattering the poly-silicon layer and the first metal layer; forming a second metal layer covering the upper electrode pattern on an entire surface of the semiconductor substrate; and forming an upper electrode constituted with the second metal layer, the poly-silicon layer and the first metal layer by patterning the second metal layer so that the second metal layer is connected with the first metal layer.

Method for fabricating capacitor of semiconductor device

A method for fabricating a semiconductor device capable of minimizing deformations of a photoresist pattern and losses of a hard mask. The method includes the steps of: forming an insulating layer for a hard mask on an etch-target layer; forming a sacrificial layer on the insulating layer; forming a photoresist pattern on the sacrificial layer; forming at least one sacrificial hard mask by etching the sacrificial layer with the photoresist pattern as an etching mask; forming the hard mask by etching the insulating layer with the sacrificial hard mask as an etching mask; and forming a predetermined number of patterns by etching the etch-target layer with use of the sacrificial hard mask and the hard mask as etching masks.

Method for fabricating semiconductor device

A method for manufacturing a capacitor bottom electrode by using low k dielectric material as a sacrificial layer is employed to simplify manufacturing steps and prevent electrical shortage phenomenon of bottom electrodes. The method includes steps of: preparing a semiconductor substrate obtained by a predetermined process; forming a sacrificial layer of low k dielectric material on the semiconductor substrate; forming a photoresist pattern on the sacrificial layer; etching the sacrificial layer by using the photoresist pattern as an etching mask, thereby forming an opening; depositing a conductive layer on sides and a bottom face of the opening and a top face of the sacrificial layer; forming a photoresist on the conductive layer, wherein a concave region of the conductive layer is completely filled with the photoresist; planarizing the conductive layer till a top face of the sacrificial layer is exposed; and forming a bottom electrode by removing the sacrificial layer enclosing the bottom electrode by using Oplasma and by removing a residual photoresist.

Method for manufacturing capacitor bottom electrode of semiconductor device

Growing community of inventors

Ichon-shi, South Korea

Il-Young Kwon