Electronics and Telecommunications Research Institute

Hankook Tire Co., Ltd.

Il Yong Park

Jong Dae Kim

Dae Woo Lee

Yil Suk Yang

Tae Moon Roh

Ji Wan Lee

Sung Tae Kim

Byoung Gon Yu

Mi Jung Lee

Sang Gi Kim

Jin Gun Koo

Sung Ku Kwon

Kil Ju Ko

Kum Kang Hwang

Hyun Ran Cho

Kwan Woo Jung

Su Hong Sung

Ill Soon Jang

Cheol Han Kang

Huyn Ran Cho

Provided are a sheet, a method of its preparation, and a tire comprising the sheet, wherein the sheet comprises tire cords, a topping rubber for topping the tire cords, and a conductive fiber located on the surface of the topping rubber. The sheet can provide tires, on which a rubber composition with a low electricity-transmitting property and low rolling resistance is applied, with excellent conductivity.

Sheet, method for manufacturing the same, and tire comprising the same

Disclosed are a hybrid cord produced by plying and twisting high modulus yarns and polyamide monofilaments, and a tire including the same. More specifically, disclosed is a method of producing a hybrid cord having a clear core-covering structure including a core comprising a polyamide monofilament and a covering spirally twisted around the core and comprising a high modulus yarn. The hybrid cord can clearly control the modulus ratio in each area, improving production efficiency of the cord and processability of the tire and reducing deviations of uniformity and driving performance. In addition, the tire using the hybrid cord reduces tire deformation during driving, thus satisfying both driving performance and comfort.

Hybrid cord and tire using the same

A hybrid cord for a tire, a method of manufacturing the same, and a high-performance environment-friendly radial tire including the same are disclosed herein. The hybrid cord includes a high-modulus fiber ply and a low-modulus fiber ply. The hybrid cord has a stress-strain curve including an initial modulus section, an intermediate modulus section and a final modulus section. The initial modulus of the initial modulus section is higher than the intermediate modulus of the intermediate modulus section, and the final modulus of the final modulus section is higher than the intermediate modulus.

Hybrid cord and high-performance radial tire including the same

Provided are a rubber composition for tire tread containing 100 parts by weight of raw material rubber, 10 parts to 100 parts by weight of a reinforcing filler, and 1 part to 20 parts by weight of a silane compound represented by the following formula (1), the raw material rubber containing 40 parts to 90 parts by weight of a styrene-butadiene rubber and 10 parts to 60 parts by weight of a butadiene rubber; and a tire produced using the rubber composition. The rubber composition for tire tread exhibit improved dispersibility, processability, mechanical characteristics, abrasion resistance performance, and rolling resistance characteristics. wherein X represents a vinyl group; Y represents an alkoxy group; Z represents an alkoxy group; a represents an integer from 0 to 6; b and c each independently represent an integer from 0 to 2 and do not necessarily represent 0 at the same time; and x represents an integer from 1 to 3.

Rubber composition for tire tread and tire manufactured by using the same

Disclosed is a tire-reinforcing steel cord for a radial tire. The tire-reinforcing steel cord has a double layer structure including a first-layer core and a second-layer core provided on the surface of the first-layer core. The first-layer core has an elliptical or rectangular cross section. The tire-reinforcing steel cord can improve processability, fatigue characteristics, and rolling resistance performance of a tire, resulting in improved fuel efficiency. A radial tire using the tire-reinforcing steel cord is also disclosed.

Tire-reinforcing steel cord and radial tire using the same

Provided is a source driver circuit for an active matrix electroluminescent (EL) display including a digital-to-analog converter/ramp circuit for converting a digital signal into an analog signal, and generating a ramp signal in this process, simultaneously, whereby high degree of integration would be possible since a conventional complicated circuit is not required and gray scale with the high characteristic can be implanted, regardless of a change of a temperature or a threshold voltage.

Sources driver circuit for active matrix electroluminescent display and driving method thereof

Provided are a multi-gate MOS transistor and a method of manufacturing the same. Two silicon fins are vertically stacked on a silicon on insulator (SOI) substrate, and four side surfaces of an upper silicon fin and three side surfaces of a lower silicon fin are used as a channel. Therefore, a channel width is increased, so that current driving capability of a device is improved, and high performance nano-level semiconductor IC and highly integrated memory IC can be manufactured through the optimization and stability of a process.

Multi-gate MOS transistor and method of manufacturing the same

The present invention relates to structures of a high voltage device and a low voltage device formed on a SOI substrate and a method for manufacturing the same, and it is characterized in which the low voltage device region of silicon device regions in a SOI substrate is higher than the high voltage device region by steps, and a thickness of the silicon device region, where the high voltage device is formed, is equal to a junction depth of impurities of a source and drain in the low voltage device. Accordingly, silicon device regions in the SOI substrate are divided into the high voltage region and the low voltage region and steps are formed there between by oxidation growth method, so that the high voltage device having low junction capacitance can be made, and the low voltage device compatible with the conventional CMOS process and device characteristics can also be made at the same time.

Structures of high voltage device and low voltage device, and method of manufacturing the same

The present invention relates to a method of fabricating a high-voltage high-power integrated circuit device using a substrate of a SOI structure in which an insulating film and a silicon layer are sequentially stacked on a silicon substrate. The method comprising the steps of sequentially forming an oxide film and a photoresist film on the silicon layer and then performing a photolithography process using a trench mask to pattern the photoresist film; patterning the oxide film using the patterned photoresist film as a mask and then removing the photoresist film remained after the patterning; etching the silicon layer using the patterned oxide film as a mask until the insulating film is exposed to form a trench; forming a nitride film on the entire surface including the trench, performing an annealing process and depositing polysilicon on the entire surface so that the trench is buried; and sequentially removing the polysilicon and the nitride film until the silicon layer is exposed to flatten the surface, thus forming a device isolating film for electrical isolation between devices within the trench. Therefore, the present invention can effectively reduce the isolation area of the trench between the high-voltage high-power device and the logic CMOS device and can easily control the concentration of a deep well.

Method for fabricating a high-voltage high-power integrated circuit device

The present invention relates to an input and output port circuit. The input and output port circuit comprises a signal register for storing output signals, an input/output register at which an input/output control signal for determining an input/output direction is stored, a plurality of control registers, a power supply switch circuit for selectively supplying a low voltage or a high voltage depending on a power mode control signal, a signal direction control circuit for determining the direction of the signal depending on a value of the signal register and a value of the input/output register, an output control circuit driven depending on the value of the control register and an output of the signal direction control circuit, and an output driving circuit for outputting the low voltage, the high voltage or the ground value depending on an output of the signal direction control circuit and an output of the output control circuit. The high voltage and the low voltage can be simultaneously driven using only a single output driving circuit and the single output driving circuit is constructed in multiple stages and is selectively driven by the output control register. Therefore, the power consumption can be saved.

Input and output port circuit

The present invention provides an EDMOS (extended drain MOS) device having a lattice type drift region and a method of manufacturing the same. In the case of n channel EDMOS(nEDMOS), the drift region has a lattice structure in which an n lattice having a high concentration and a p lattice having a low concentration are alternately arranged. As a drain voltage is applied, a depletion layer is abruptly extended by a pn junction of the n lattice and the p lattice, so that the entire drift region is easily depleted. Therefore, a breakdown voltage of the device is increased, and an on resistance of the device is decreased due to the n lattice with high concentration.

Growing community of inventors

Daejeon, South Korea

Il Yong Park