Samsung Electronics Co., Ltd.

Il-Yong Jang

Jeong-yun Lee

Hoon Tae Kim

Sang-Gyun Woo

Seong-woon Choi

Dong-Seok Nam

Hyung-ho Ko

Hyon-Seok Song

Hye-Kyoung Lee

In-Yong Kang

Jin-sang Yoon

Byung-Gook Kim

Sang-Hee Lee

Sung-jae Han

Won-Suk Ahn

Ka-soon Yim

Jae-hee Hwang

Seong-Yong Moon

Sung-Hoon Jang

Hyun-Seok Uhm

Mask inspection apparatuses and/or mask inspection methods are provided that enable quick and accurate inspection of a registration of a pattern on a mask while a defect of the mask and the registration of the pattern are inspected simultaneously. The mask inspection apparatus may include a stage configured to receive a mask for inspection; an e-beam array including a plurality of e-beam irradiators configured to irradiate e-beams to the mask and detectors configured to detect electrons emitted from the mask; and a processor configured to process signals from the detectors. A defect of the mask may be detected through processing of the signal and registrations of patterns on the mask may be inspected based on positional information regarding the e-beam irradiators.

Mask inspection apparatuses and methods, and methods of fabricating masks including mask inspection methods

A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.

Phase shift mask

A pattern generating method includes, generating a first bit map from inputted pattern data. Characteristics of a plurality of beams for exposing a pattern on a substrate are analyzed, each of the plurality of beams being designated to correspond to one of a plurality of grids in the first bit map. The pattern data is corrected such that at least one of the plurality of beams is designated to expose at least a portion of the pattern on the substrate. A second bit map is generated from the corrected pattern data. The substrate is patterned using the plurality of beams according to the designation of the second bit map.

Method of generating a pattern on a photomask using a plurality of beams and pattern generator for performing the same

Photomask and method of forming the same and methods of manufacturing electronic device and display device using the photomask

Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.

Halftone phase shift blank photomasks and halftone phase shift photomasks

A photomask includes a pattern area and a blind area, a first opaque pattern disposed on the blind area and having a first thickness, and a second opaque pattern disposed on the pattern area and having a second thickness smaller than the first thickness. The first and second opaque patterns are formed of the same material.

Photomasks and methods of fabricating the same

Methods of fabricating halftone phase shift blank photomasks and halftone phase shift photomasks

A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.

Photo-mask having exposure blocking region and methods of designing and fabricating the same

A method of repairing a phase shift mask includes exposing upper and side surfaces of the phase shift pattern of the mask, selectively forming a passivation layer on the surfaces of the exposed phase shift patterns, and then cleaning the phase shift mask on which the passivation layers are formed. The repairing of the phase shift mask is carried out in the midst of a series of photolithographic exposure processes in which the phase shift mask is used to transfer an image to a photoresist layer or layers. After the photomask is cleaned, a determination is made as to whether the transmittance of the phase shift pattern is above a threshold value.

Method of repairing phase shift mask

A photomask blank includes a hard mask having an excellent etch selectivity with respect to an opaque layer. The photomask blank includes a light-transmissive substrate, an opaque chromium layer disposed on the light-transmissive substrate, and a hard mask layer disposed on the opaque chromium layer. The hard mask layer is of a conductive material having an etch selectivity of at least 3:1 with respect to the opaque chromium layer against an etch gas mixture including chlorine gas and oxygen gas. Also, a resist layer is disposed on the hard mask layer. Alternatively, a phase shift layer can be interposed between the light-transmissive substrate and the opaque chromium layer. Preferably, the hard mask layer is formed of Mo or MoSi. First, the resist layer is patterned, and the hard mask is etched using the patterned resist as an etch mask. Then the chromium layer is etched using the patterned hard mask as an etch mask.

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Yongin-si, South Korea

Il-Yong Jang