Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Seoul National University

Chung Ang University Industry Academic Cooperation

Il Wun Shim

Seung Soo Lee

Kook Won Seo

Jong Pil Park

Disclosed is a method for fabricating a CuInSthin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInSthin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInSthin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInSthin film fabricated by the method. Disclosed is further a method for fabricating an InSthin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInSthin film by MOCVD. Disclosed further is an InSthin film fabricated by the method. The InSthin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.

Growing community of inventors

Seoul, South Korea

Il Wun Shim