Samsung Electronics Co., Ltd.

Il-Woo Kim

Ik-Soo Kim

Min Soo Kim

Byoung-Deog Choi

Kyu-Tae Na

Dae-Young Kwak

Ju-Wan Kim

Sang-Ho Rha

Seung-Bae Park

Min-Jae Oh

Hee-Sook Park

Myoung-Bum Lee

Hauk Han

Hyungjoon Kim

Jiwoon Im

Yong-Il Kwon

Jeong-gil Lee

Myoungwoon Kim

Ji-Woon Im

Hee Jong Jeong

Jaewon Jung

Hyun-Gon Pyo

Je-Dong Lee

Younghoon Kwon

Sang-Gi An

A method of manufacturing a vertical memory device includes forming a first sacrificial layer on a substrate, the first sacrificial layer including a first insulating material, forming a mold including an insulation layer and a second sacrificial layer alternately and repeatedly stacked on the first sacrificial layer, the insulation layer and the second sacrificial layer including second and third insulating materials, respectively, different from the first insulating material, forming a channel through the mold and the first sacrificial layer, forming an opening through the mold and the first sacrificial layer to expose an upper surface of the substrate, removing the first sacrificial layer through the opening to form a first gap, forming a channel connecting pattern to fill the first gap, and replacing the second sacrificial layer with a gate electrode.

Stacked structure for a vertical memory device

In a method of manufacturing a vertical memory device, a first sacrificial layer including a nitride is formed on a substrate. A mold including an insulation layer and a second sacrificial layer alternately and repeatedly stacked on the first sacrificial layer is formed. The insulation layer and the second sacrificial layer include a first oxide and a second oxide, respectively. A channel is formed through the mold and the first sacrificial layer. An opening is formed through the mold and the first sacrificial layer to expose an upper surface of the substrate. The first sacrificial layer is removed through the opening to form a first gap. A channel connecting pattern is formed to fill the first gap. The second sacrificial layer is replaced with a gate electrode.

Methods of manufacturing a vertical memory device

An electronic circuit includes a first filter and a second filter. The first filter passes a first frequency component of a first harmonic frequency generated by a first voltage source to form a potential difference in a chamber and a second frequency component of a second harmonic frequency higher than the first harmonic frequency. The second filter removes the first frequency component and the second frequency component received from the first filter. The second harmonic frequency is included in a first frequency band determined based on a capacitance of the second filter.

Electronic circuit for filtering signal received from plasma chamber

A memory device includes a gate structure, a contact plug, and a spacer. The gate structure includes first and second conductive layer patterns sequentially stacked on a substrate. The contact plug passes through the second conductive layer pattern, and a sidewall of the contact plug directly contacts at least a portion of the second conductive layer pattern. The spacer surrounds a portion of the sidewall of the contact plug and contacting the gate structure.

Memory device and method of manufacturing the same

An isolation layer structure includes first to fourth oxide layer patterns. The first and third oxide layer patterns are sequentially formed in a first trench defined by a first recessed top surface of a substrate and sidewalls of gate structures on the substrate in a first region. The first trench has a first width, and the first and third oxide layer patterns have no void therein. The second and fourth oxide layer patterns are sequentially formed in a second trench defined by a second recessed top surface of the substrate and sidewalls of gate structures on the substrate in a second region. The second trench has a second width larger than the first width, and the fourth oxide layer pattern has a void therein.

Isolation layer structure, method of forming the same and method of manufacturing a semiconductor device including the same

Method of forming isolation layer structure and method of manufacturing a semiconductor device including the same

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Hwaseong-si, South Korea

Il-Woo Kim