Skhynix Inc.

Il Sup Jin

Seung Hwan Kim

Dong Sun Sheen

Su Ock Chung

Seon Yong Cha

A memory cell includes: a substrate; an active layer spaced apart from a surface of the substrate and extending in a direction which is parallel to the surface of the substrate; a bit line coupled to one side of the active layer and extending in a direction perpendicular to the surface of the substrate; a capacitor coupled to another side of the active layer and spaced apart from the surface of the substrate; and a word line vertically spaced apart from the active layer and extending in a direction intersecting with the active layer, wherein the word line includes a first notch-shaped sidewall and a second notch-shaped sidewall that face each other.

Growing community of inventors

Gyeonggi-do, South Korea

Il Sup Jin