Danmarks Tekniske Universitet

Il-Sug Chung

Ole Hansen

Kresten Yvind

Thor Ansbæk

Thor ANSBÆK

Wavelength sweepable laser source is disclosed, wherein the laser source is a semiconductor laser source adapted for generating laser light at a lasing wavelength. The laser source comprises a substrate, a first reflector, and a second reflector. The first and second reflector together defines an optical cavity, and are arranged to support light oscillation in the optical cavity along an optical path in a direction normal to the substrate. The optical cavity comprises a void in the optical path. The second reflector is resiliently suspended by a suspension in a distance from the first reflector and having a rest position, the second reflector and suspension together defining a microelectromechanical MEMS oscillator. The MEMS oscillator has a resonance frequency and is adapted for oscillating the second reflector on either side of the rest position. The laser source further comprises electrical connections adapted for applying an electric field to the MEMS oscillator. Furthermore, a laser source system and a method of use of the laser source are disclosed.

Wavelength sweepable laser source

The present invention provides a light source () for light circuits on a silicon platform (). A vertical laser cavity is formed by a gain region () arranged between a top mirror () and a bottom grating-mirror () in a grating region () in a silicon layer () on a substrate. A waveguide () for receiving light from the grating region () is formed within or to be connected to the grating region, and functions as an 5 output coupler for the VCL. Thereby, vertical lasing modes () are coupled to lateral in-plane modes () of the in-plane waveguide formed in the silicon layer, and light can be provided to e.g. photonic circuits on a SOI or CMOS substrate in the silicon.

Hybrid vertical-cavity laser

The present invention provides a light source for light circuits on a silicon platform. A vertical laser cavity is formed by a gain region arranged between a first mirror structure and a second mirror structure, both acting as mirrors, by forming a grating region including an active material in a silicon layer in a semiconductor structure or wafer structure. A waveguide for receiving light from the region of the mirrors is formed within or to be connected to the region of the mirrors, and functions as an output coupler for the VCL. Thereby, vertical lasing modes are coupled to lateral in-plane modes of the in-plane waveguide formed in the silicon layer, and light can be provided to e.g. photonic circuits on a SOI or CMOS substrate in the silicon.

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Lyngby, Denmark

Il-Sug Chung