Skhynix Inc.

Il-Sik Jang

Ji-Hwan Park

Seong-Wan Ryu

Tae-Su Jang

Se-In Kwon

Jung-Ho Shin

Jin-Chul Park

Dae-Jin Ham

Mi-Ri Lee

Sun-Hwan Hwang

Bong-Seok Jeon

Seung-Woo Jin

Yong-Soo Joung

Jae-Chun Cha

An-Bae Lee

A method for fabricating a semiconductor device includes: forming a transistor in a semiconductor substrate; forming a capacitor including a hydrogen-containing top electrode over the transistor; and performing an annealing process for hydrogen passivation after the capacitor is formed.

Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom surface and sidewalls of the gate trench; forming a first work function layer over the gate dielectric layer; doping a work function adjustment element to form a second work function layer which overlaps with the sidewalls of the gate trench; forming a gate conductive layer that partially fills the gate trench; and forming doped regions inside the semiconductor substrate on both sides of the gate trench.

Semiconductor device having buried gate structure and method for fabricating the same

A method for fabricating a semiconductor device includes: implanting a first species into a substrate at a cold temperature to form a first region; and implanting a second species into the substrate at a hot temperature to form a second region that is adjacent to the first region.

Method of forming regions with hot and cold implants

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Gyeonggi-do, South Korea

Il-Sik Jang