Samsung Electronics Co., Ltd.

Il-mok Park

Gwan-Hyeob Koh

Dae-Hwan Kang

Seul-ji Song

Ji-Hyun Jeong

Jong-Chul Park

Sung-Won Kim

A method of fabricating a memory device may include forming a first conductive line extending over a substrate in a first direction, forming a memory cell pillar on the first conductive line, and forming a second conductive line extending over the memory cell pillar in a second direction that intersects the first direction, such that the first and second conductive lines vertically overlap with the memory cell pillar interposed between the first and second conductive lines. The memory cell pillar may include a heating electrode layer and a resistive memory layer. The resistive memory layer may include a wedge memory portion and a body memory portion. The wedge memory portion may contact the heating electrode layer and may have a width that that changes with increasing distance from the heating electrode layer. The body memory portion may be connected to the wedge memory portion.

Memory device with memory cell pillar having resistive memory layer with wedge memory portion and body memory portion, and method of fabricating the same

A memory device includes a lower conductive line, a first memory unit, a second memory unit, and a shared lower electrode including first and second portions electrically connecting respective ones of the first memory unit and the second memory unit to the lower conductive line. A first insulating region is disposed between the first and second memory units. A second insulating region is disposed on the first insulating region. The device further includes a first switch unit on the first memory unit and including an upper electrode with a portion protruding from the second insulating region and a second switch unit on the second memory unit and including an upper electrode with a portion protruding from the second insulating region. First and second upper conductive lines contact the protruding portions of the respective upper electrodes.

Memory device

A memory device including first conductive lines spaced apart from each other and extending in a first direction; second conductive lines spaced apart from each other and extending in a second direction that is different from the first direction; first memory cells having a structure that includes a selection device layer, a middle electrode layer, a variable resistance layer, and a top electrode layer; and insulating structures arranged alternately with the first memory cells in the second direction under the second conductive lines, wherein the first insulating structures have a top surface that is higher than a top surface of the first top electrode layer, and the second conductive lines have a structure that includes convex and concave portions, the convex portions being connected to the top surface of the top electrode layer and the concave portions accommodating the insulating structures between the convex portions.

Memory device and method of manufacturing the same

A memory device may include a first conductive line, a second conductive line extending in a direction intersecting the first conductive line, such that the first conductive line and the second conductive line vertically overlap at a cross-point between the first conductive line and the second conductive line, and a memory cell pillar at the cross-point. The memory cell pillar may include a heating electrode layer and a resistive memory layer contacting the heating electrode layer. The resistive memory layer may include a wedge memory portion having a width that increases continuously in proportion with increasing distance from the heating electrode layer, and a body memory portion connected to the wedge memory portion such that the body memory portion and the wedge memory portion comprise an individual and continuous layer, the body memory portion having a greater width than the wedge memory portion.

Disclosed are a semiconductor memory device and a method of manufacturing the same. A first conductive line extends in a first direction on a substrate and has a plurality of protrusions and recesses that are alternately formed thereon. A second conductive line is arranged over the first conductive line in a second direction such that the first and the second conductive lines cross at the protrusions. A plurality of memory cell structures is positioned on the protrusions of the first conductive line and is contact with the second conductive line. A thermal insulating plug is positioned on the recesses of the first conductive line and reduces heat transfer between a pair of the neighboring cell structures in the first direction. Accordingly, the heat cross talk is reduced between the neighboring cell structures along the conductive line.

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Seoul, South Korea

Il-mok Park