Samsung Electronics Co., Ltd.

Il-kyoung Kim

Sue-ryeon Kim

Chang-su Lim

Hyeog-Ki Kim

A dustproof fabric for use in manufacturing a smock to be worn in a clean room of a semiconductor fabrication facility includes an inner layer of a knitted fabric, an intermediate layer attached to the inner layer and formed of a non-micro porous polyurethane resin film possessing a high degree of moisture absorbency, and an outer layer attached to the intermediate layer and formed of a high density polyester woven fabric containing conductive yarn in the warp and weft.

Dustproof smock for use in a clean room, fabric for use in manufacturing the smock, and method of manufacturing the fabric

A dust-proof fabric is disclosed. The fabric comprises an inner knit fabric layer, an intermediate layer of a moisture absorbent polyurethane film and a high density woven polyester fabric outer layer. The outer layer contains a first set of spaced apart conductive yarns aligned with one another in the warp direction and a second set of spaced apart conductive yarns aligned in the weft direction.

Growing community of inventors

Kyoungsangbuk-do, South Korea

Il-kyoung Kim