Samsung Electronics Co., Ltd.

Ulvac, Inc.

Il-Kyoung Kim

Ji-Hee Kwak

Da-Hee Heo

Eun Ae Shally Lee

Ki-Young Yun

No-Hyun Huh

Sung-Wook Park

Seung-Ki Chae

Sung-wook Park

Seiichi Takahashi

Woo-Seok Kim

Jae-Wook Kim

Jae-Hyuck An

Myeong-Jin Kim

Kwang-Myung Lee

Tae-Won Lee

Kengo Tsutsumi

Young-Ha Yoon

Tae-Sub Im

Shinji Yanagisawa

Won-Soon Lee

Kyoung-Ho Jang

Packaging box

Tray for packaging box

A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.

Etching apparatus and etching method

An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

Ion implanter with etch prevention member(s)

Growing community of inventors

Suwon-si, South Korea

Il-Kyoung Kim