Hyundai Electronics Industries Co. Ltd.

Hyundai Electronics Industries

Il Keoun Han

Sang H Woo

Kee Jeung Lee

Hong Seon Yang

Seung Woo Shin

Hoon Jung Oh

Kwang Chul Joo

Seong Su Lim

Kwang Seok Jeon

Hong Seon Yan

Jung Yun Mun

Disclosed are a capacitor for a semiconductor device capable of increasing storage capacitance and preventing leakage current, and a method of manufacturing the same. According to the present invention, a lower electrode is formed on a semiconductor substrate. A surface of the lower electrode is surface-treated to prevent generation of a natural oxide layer. A TaON layer as a dielectric layer is deposited on the lower electrode. Impurities of the TaON layer are crystallized and out-diffused. And an upper electrode is deposited on the TaON layer. Herein, the TaON layer is formed by a chemical vapor reaction of Ta obtained from O gas and NH gas in an LPCVD chamber to which O gas and NH gas are supplied at a pressure of 0.1&tilde;10 Torr at a temperature of 300&tilde;600&deg; C., respectively.

Capacitor for semiconductor memory device and method of manufacturing the same

Disclosed are a capacitor for a semiconductor memory device and a method of manufacturing the same. According to the present invention, the method includes the steps of: forming a lower electrode on a semiconductor substrate; nitride-treating the surface of the lower electrode so as to prevent a natural oxide layer from generating on the surface thereof; forming a Ta O layer as a dielectric layer on the upper part of the lower electrode; forming a conductive barrier made of the silicon nitride layer on the upper part of the Ta O layer; and forming an upper electrode on the upper part of the conductive barrier.

The present invention relates to semiconductor manufacturing field, more particularly, to a process of forming a charge storage electrode to which a selective hemispherical grains (HSG) silicon film is applied. The object of the present invention is to provide a method of forming a charge storage electrode having the selective HSG silicon film in semiconductor device which can secure a sufficient capacitor effective surface area by obtaining desired grain size at the time of selective HSG silicon film formation. The present invention prevents remaining of carbon component which obstructs the growth of HSG silicon film after dry etching process by limiting the carbon halide gas used in dry etching process of amorphous silicon film for defining the charge storage electrode at the time of process of forming the charge storage electrode having selective HSG silicon film. That is, the present invention is a technology of etching a part of amorphous silicon film by using general carbon halide gas at the time of dry etching process of the amorphous silicon film for defining the charge storage electrode, and then, finally etching the remaining part of amorphous silicon film by using silicon etching gas such as SF,gas, Cl,&plus;O,gas, HBr gas, etc. not containing carbon component or only using the etching gas such as SF,gas, Cl,&plus;O,gas, HBr gas, etc. not containing carbon component during selective etching of amorphous silicon film.

Method of forming a charge storage electrode having a selective hemispherical grains silicon film in a semiconductor device

The present invention is a method which can obtain an actual value close to a desired capacitance of capacitor by precisely monitoring the area variation rate of film by using a correlation between a height of hemispherical grains formed on a surface of film and a surface area of film. The present invention provides a method of calculating an area variation rate `C.sub.E ` by using the porosity ratio `f.sub.v ` and the height `t` of hemispherical grains and measuring the capacitance of capacitor by using the obtained area variation rate. According to this method, the area variation rate of film can be obtained close to actual value by measuring the height of hemispherical grains formed on the surface of film, and the variation in capacitance before completion of capacitor can be precisely obtained. In addition, the present invention has effects of improving the reliability and manufacturing yield of capacitor by enabling the monitoring of area variation rate close to actual value in the step of forming the hemispherical grains on the surface of film.

Method of measuring surface area variation rate of a polysilicon film

This invention discloses a method of forming an electrode of semiconductor device. In the present invention, an amorphous silicon film is formed on a substrate, and silicon seeds are formed on the silicon film. Thereinafter, the heat treatment is performed for growing, thereby forming an hemispherical roughness structure on surface of said charge storage electrode and increasing a surface area in unit area.

Growing community of inventors

Ich'on Kyoungki-do, South Korea

Il Keoun Han