Renesas Technology Corp.

Il-Jung Kim

Shigenobu Maeda

Toshiaki Iwamatsu

Takashi Ipposhi

Shigeto Maegawa

Hirotada Kuriyama

Yoshiyuki Ishigaki

Toshiaki Tsutsumi

Motomu Ukita

Kazuhito Tsutsumi

Provided are a thin-film transistor formed by connecting polysilicon layers having different conductivity types with each other which prevents occurrence of inconvenience resulting from diffusion of impurities and a method of fabricating the same. A drain (), a channel () and a source () are integrally formed on a surface of a second oxide film () by polysilicon. The drain () is formed to be connected with a pad layer () (second polycrystalline semiconductor layer) through a contact hole () which is formed to reach an upper surface of the pad layer (). The pad layer () positioned on a bottom portion of the contact hole () (opening) is provided with a boron implantation region BR.

Thin-film transistor and method of fabricating the same

Growing community of inventors

Tokyo, Japan

Il-Jung Kim