Magnachip Mixed-signal, Ltd.

Il Jun Kim

Hyoung Kyu Kim

Kwon Young Oh

Sang Ho Lee

A power source switching circuit for a memory device includes: a first power source voltage terminal for supplying a first power source voltage, a second power source voltage terminal for supplying a second power source voltage, a first metal-oxide-semiconductor field-effect transistor (MOSFET) and a second MOSFET connected in series with the first power source voltage terminal, a first level shifter connected to the first MOSFET and supplied with the first power source voltage, a second level shifter connected to the second MOSFET and supplied with the second power source voltage, a third MOSFET connected to the second MOSFET, and a third level shifter connected to the third MOSFET and supplied with a third power source voltage, and a memory cell of a non-volatile memory is programmed using the first power source voltage or the second power source voltage.

Growing community of inventors

Cheongju-si, South Korea

Il Jun Kim