Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Il-Jeong Lee

Choong-Youl Im

Do-Hyun Kwon

Ju-Won Yoon

Cheol-Ho Yu

Jong-Mo Yeo

Young-Dae Kim

Dae-Hyun No

Moo-Soon Ko

Min-Woo Woo

Jung-Kyu Lee

Sung-Eun Lee

Su-Mi Lee

Jong-Yun Kim

Min-Jung Lee

Kwang-Young Choi

Jong-Hyun Choi

Sung-Chul Kim

Hee-Seong Jeong

Sung-Ho Kim

Jung-Hwa Kim

Song-Yi Jeon

Jong-Yoon Kim

Jong-Hyuk Lee

Kwan-Hee Lee

Jeong-Ho Lee

Gyoo-Chul Jo

Jae-Yong Kim

Jeong-Soo Lee

Kwang-Suk Kim

Oh-Seob Kwon

Jin-Gyu Kang

Yong-Woo Park

Soo-Beom Jo

Su-Yeon Sim

Sang-Bong Lee

Wang-Woo Lee

Seung-Min Lee

Kyoung-Bo Kim

Han-Hee Yoon

Young-dae Kim

In-young Jung

Sung-ho Kim

Sung-Won Doh

Jang-Soon Im

Ji-Yong Noh

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate and an active pattern formed over the substrate. The OLED display also includes first and second gate electrodes formed over the active pattern. The first gate electrode defines a first transistor together with the active pattern. The second gate electrode defines a second transistor and a third transistor together with the active pattern. The OLED display further includes a first conductive pattern formed over the first and second gate electrodes. The first conductive pattern overlaps at least a portion of the second and/or third transistors so as to define a parasitic capacitor.

Organic light-emitting diode (OLED) display

An organic light emitting diode display includes: a substrate; a substrate insulating layer on the substrate; a capacitor on the substrate insulating layer; a driving thin film transistor including a driving gate electrode connected to the capacitor; and an organic light emitting element connected to the driving thin film transistor, where the capacitor includes: a first capacitor electrode on the substrate insulating layer; a second capacitor electrode on the first capacitor electrode; a capacitor insulating layer between the first capacitor electrode and the second capacitor electrode and contacting the first capacitor electrode and the second capacitor electrode, the capacitor insulating layer having a higher dielectric constant than the substrate insulating layer; and an auxiliary electrode contacting at least one of the first capacitor electrode or the second capacitor electrode.

Organic light emitting diode display

An organic light emitting display device having an electrostatic capacitive type touch panel function with reduced thickness and improved luminance. A display panel of the organic light emitting display device includes a substrate, a display unit having a plurality of pixels on the substrate, and a touch sensing unit on the display unit. The touch sensing unit includes an encapsulation substrate and a capacitive pattern layer on a side of the encapsulation substrate facing the display unit. The capacitive pattern layer has a plurality of openings corresponding in position to the plurality of pixels.

Organic light emitting display device

A semiconductor element includes a substrate, a gate electrode, an active layer, a contact layer, a first electrode, and a second electrode. The gate electrode is disposed on the substrate. The gate insulation layer is disposed on the gate electrode. The active layer is disposed on the gate insulation layer, and includes a first end portion and a second end portion that is opposite the first end portion. The contact layer overlaps the second end portion of the active layer. The first electrode is in contact with the first end portion. The second electrode is spaced apart from the first electrode, and is in contact with the contact layer.

Semiconductor element and organic light emitting display device having a semiconductor element

An organic light emitting diode (OLED) display including a first pixel, a second pixel, and a third pixel disposed in a matrix and first to third driving voltage lines configured to transmit a driving voltage to the first to third pixel, respectively. A width of one driving voltage line among the first to third driving voltage lines is different from the width of the other driving voltage lines.

Organic light emitting diode display including driving voltage line

A method for manufacturing a flexible display device includes forming a heat generator on a carrier substrate, forming a flexible substrate on the heat generator, forming a thin film transistor on the flexible substrate, forming a light emitting element connected to the thin film transistor, and separating the flexible substrate from the heat generator by application of heat to the flexible substrate, the application of heat including generation of heat by the heat generator.

Flexible display device and manufacturing method thereof

A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

Thin film transistor substrate, display device having the same and method of manufacturing the same

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a plurality of pixels. Each of the pixels includes a first insulating layer and first and second signal lines spaced apart from each other. At least a portion of the first and second signal lines is formed over the first insulating layer. Each pixel also includes a second insulating layer interposed between the first and second signal lines. The second insulating layer has a lower permittivity that the first insulating layer.

An organic light emitting diode (OLED) display includes a scan line, a data line, a driving voltage line, a switching transistor, a driving transistor and an OLED. The scan line is formed on a substrate to transmit a scan signal. The data line and the driving voltage line, intersecting the scan line, transmit a data signal and a driving voltage, respectively. The switching transistor, electrically coupled to the scan line and the data line, includes a switching semiconductor layer, a switching gate electrode, and a gate insulating layer having a first thickness. The driving transistor, electrically coupled to the switching drain electrode, includes a driving semiconductor layer, a driving gate electrode and a gate insulating layer having a second thickness. The OLED is electrically coupled to the driving drain electrode. The data line and the driving voltage line are formed with different layers from each other.

A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.

Thin film transistor and organic light-emitting display

A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.

Thin-film transistor array substrate, display device including the same, and method of manufacturing the thin-film transistor array substrate

A display device includes a substrate, an active layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a clad layer, a source electrode, and a drain electrode. The active layer is disposed on the substrate. The gate insulation layer is disposed on the active layer. The gate electrode is disposed on the gate insulation layer. The interlayer insulation layer is disposed on the gate electrode. A dielectric constant of the interlayer insulation layer is less than a dielectric constant of the gate insulation layer. The clad layer is disposed on the interlayer insulation layer. The source and drain electrodes are disposed on the clad layer.

Display device and method of manufacturing the same

Thin film transistor substrate and display device having the same

A organic light emitting display device includes a thin film transistor (TFT) having a gate electrode, a source electrode and a drain electrode which are insulated from the gate electrode, and a semiconductor layer which is insulated from the gate electrode and which contacts each of the source electrode and the drain electrode; and a pixel electrode electrically connected to one of the source electrode and the drain electrode. The gate electrode is made up of a first conductive layer and a second conductive layer on the first conductive layer, and the pixel electrode is formed of the same material as the first conductive layer of the gate electrode on a same layer as the first conductive layer of the gate electrode.

Method of manufacturing an organic light emitting display device by patterning and formation of pixel and gate electrodes

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Yongin, South Korea

Il-Jeong Lee