Samsung Electronics Co., Ltd.

Seoul National University

Il-Han Park

Bong-Soon Lim

Jin-Young Kim

Ji-Young Lee

Sang-won Shim

Kui-Han Ko

Kang-Bin Lee

June-Hong Park

Seung-Jae Lee

Byung-Gook Park

Seung-Hwan Song

Seung-Bum Kim

Sang-Hyun Joo

Joon-Young Park

Su-Chang Jeon

Chang-Yeon Yu

Joo-Yong Park

Go-Eun Jung

Na-Young Choi

Young-sik Rho

Jong-Hoo Jo

Tae-Hoon Kim

Minsu Kim

Ki-Whan Song

Hyun Seok Seo

Chung-woo Kim

Jong-Hoon Lee

Doo-hyun Kim

Byung-Soo Kim

Sang-Yong Yoon

Jeong-Hee Han

Jun-yong Park

Jung-Yun Yun

Su Chang Jeon

Jung-Ho Song

Chan-Jin Park

Ji-Suk Kim

Yong-Sung Cho

Su-Yong Kim

Jae-Yun Lee

Soo-Doo Chae

Eung-Suk Lee

Hye-Jin Yim

Sang-In Park

Hyun-jun Yoon

Ki-Hwan Song

Young-Sun Song

Gyu-Seon Rhim

Sung-Woon Choi

Youn-ho Hong

Se-Won Yun

Young-Sik Rho

To program in a nonvolatile memory device including a cell region including first metal pads and a peripheral region including second metal pads and vertically connected to the cell region by the first metal pads and the second metal pads, a memory block is provided with a plurality of sub blocks disposed in a vertical direction where the memory block includes a plurality of cell strings each including a plurality of memory cells connected in series and disposed in the vertical direction. A plurality of intermediate switching transistors are disposed in a boundary portion between two adjacent sub blocks in the vertical direction. Each of the plurality of intermediate switching transistors is selectively activated based on a program address during a program operation. The selectively activating each of the plurality of intermediate switching transistors includes selectively turning on one or more intermediate switching transistors in a selected cell string based on the program address.

Nonvolatile memory device with intermediate switching transistors and programming method

Nonvolatile memory device includes memory cell region including a first metal pad and a second metal pad, peripheral circuit region including a third metal pad and a fourth metal pad, vertically connected to the memory cell region. The nonvolatile memory device includes a page buffer circuit including page buffers to sense data from selected memory cells, each including two sequential sensing operations to determine one data state, and each of the page buffers including a latch to sequentially store results of the two sequential sensing operations. The nonvolatile memory device includes control circuit in the peripheral circuit region, to control the page buffers to store result of the first read operation, reset the latches after completion of the first read operation, and control the page buffers to perform the second read operation based on a valley determined based on the result of the first read operation.

Nonvolatile memory devices

A nonvolatile memory device including: a first semiconductor layer including word lines, bit lines, first and second upper substrates adjacent to each other and a memory cell array, wherein the memory cell array includes a first vertical structure on the first upper substrate and a second vertical structure on the second upper substrate; and a second semiconductor layer under the first semiconductor layer, wherein the second semiconductor layer includes a lower substrate that includes row decoder and page buffer circuits, wherein the first vertical structure includes a first via area in which a first through-hole via is provided, wherein the first through-hole via passes through the first vertical structure and connects a first bit line and a first page buffer circuit, and the second vertical structure includes a first partial block, wherein the first partial block overlaps the first via area.

Nonvolatile memory device having a vertical structure and a memory system including the same

A nonvolatile memory device including: a first semiconductor layer comprising a plurality of first word lines extending in a first direction, a first upper substrate and a first memory cell array, a second semiconductor layer including a plurality of second word lines extending in the first direction, second and third upper substrates adjacent to each other in the first direction and a second memory cell array, wherein the second memory cell array includes a first vertical structure on the first upper substrate and a second vertical structure on the second upper substrate, wherein the first semiconductor layer and the second semiconductor layer share a plurality of bit lines extending in a second direction, and a third semiconductor layer under the second semiconductor layer in a third direction perpendicular to the first and second directions, wherein the third semiconductor layer includes a lower substrate that includes a plurality of row decoder circuits and a plurality of page buffer circuits, wherein the first vertical structure includes a first via area in which a first through-hole via is provided, wherein the first through-hole via passes through the first vertical structure and connects a first bit line and a first page buffer circuit, and the second vertical structure includes a first partial block, wherein the first partial block overlaps the first via area in the first direction.

To program in a nonvolatile memory device, a memory block is provided with a plurality of sub blocks disposed in a vertical direction where the memory block includes a plurality of cell strings each including a plurality of memory cells connected in series and disposed in the vertical direction. A plurality of intermediate switching transistors are disposed in a boundary portion between two adjacent sub blocks in the vertical direction. Each of the plurality of intermediate switching transistors is selectively activated based on a program address during a program operation. The selectively activating each of the plurality of intermediate switching transistors includes selectively turning on one or more intermediate switching transistors in a selected cell string based on the program address.

Provided are a non-volatile memory device and an erasing method thereof. The non-volatile memory device including a memory cell region includes first metal pads and a memory block, the memory block being disposed in a memory cell region and includes a plurality of cell strings having a plurality of memory cells stacked in a direction perpendicular to a substrate between a plurality of bit line and a common source line of the memory block, and a peripheral circuit region including second metal pads and a control logic, and vertically connected to the memory cell region by the first metal pads and the second metal pads, wherein the control logic configured to, perform control such that a first erase voltage is provided to the plurality of bit lines and the common source line, and a first erase control voltage is provided to a plurality of first selection lines and a second selection line during a first erase period, the plurality of first selection lines being used for selecting a corresponding cell string from among the plurality of cell strings and the second selection line being disposed closest to the common source line, and perform control such that a second erase voltage is provided to the plurality of bit lines, and such that a second erase control voltage is provided to at least one first selection line among the plurality of first selection lines during a second erase period, the second erase control voltage being lower than the first erase control voltage.

Non-volatile memory device and erasing method of the same

A memory device includes an array of vertical NAND strings of nonvolatile memory cells, on an underlying substrate. An erase control circuit is provided, which is configured to drive a plurality of bit lines electrically coupled to the array of vertical NAND strings of nonvolatile memory cells with respective erase voltages having unequal magnitudes during an operation to erase the nonvolatile memory cells in the array of vertical NAND strings. This erase control circuit may also be configured to drive a first of the plurality of bit lines with a first erase voltage for a first duration and drive a second of the plurality of bit lines with a second erase voltage for a second duration unequal to the first duration during the operation to erase the nonvolatile memory cells in the array of vertical NAND strings.

Non-volatile memory devices having enhanced erase control circuits therein

Nonvolatile memory device includes a memory cell array including pages, each of the pages including memory cells storing data bits, each of the data bits being selectable by a different threshold voltage, a page buffer circuit coupled to the memory cell array through bit-lines, the page buffer circuit including page buffers to sense data from selected memory cells, and perform a first read operation and a second read operation, each including two sequential sensing operations to determine one data state, and each of the page buffers including a latch configured to sequentially store results of the two sequential sensing operations, and a control circuit to control the page buffers to store a result of the first read operation, reset the latches after completion of the first read operation, and perform the second read operation based on a valley determined based on the result of the first read operation.

Nonvolatile memory devices and methods of operating a nonvolatile memory

In a method of programming in a nonvolatile memory device, channels of a plurality of cell strings are precharged through ground selection transistors by a precharge voltage of a source line. A turn-on voltage is applied to a selected ground selection transistor of a selected cell string among the plurality of cell strings, during a verification read period of an N-th program loop. The turn-on voltage applied to the selected ground selection transistor is maintained to precharge the channels for an (N+1)-th program loop, without recovery after the verification read period of the N-th program loop is finished. Power consumption is reduced and an operation speed is increased by maintaining the turn-on voltage of the selected ground selection line to precharge the channels of the cell strings without recovery after the verification read operation is finished.

Nonvolatile memory device and method of programming in the same

Provided are a non-volatile memory device and an erasing method thereof. The erasing method of the non-volatile memory device including a plurality of cell strings in which memory cells and selection transistors are connected, includes: performing a first erase operation based on an erase voltage provided to a first electrode of at least one of the selection transistors and an erase control voltage provided to a second electrode of the at least one of the selection transistors; determining whether there are slow erase cells by performing a multiple erase verify operation based on first and second verify voltages, the second verify voltage being higher than the first verify voltage; adjusting, when there are slow erase cells, the erase control voltage such that a voltage difference between the erase voltage and the erase control voltage increases; and performing a second erase operation based on the adjusted erase control voltage.

A method of operating a nonvolatile memory device is provided where the nonvolatile memory device includes a plurality of cell strings, and each cell string includes a plurality of multi-level cells. a voltage of a selected word line is sequentially changed to sequentially have a plurality of read voltages for determining threshold voltage states of the plurality of multi-level cells. A voltage of an adjacent word line adjacent to the selected word line is sequentially changed in synchronization with voltage changing time points of the selected word line. A load of the selected word line is reduced and an operation speed of the nonvolatile memory device is increased by synchronizing the voltage change of the selected word line and the voltage change of the adjacent word line in the same direction.

Nonvolatile memory device and method of operating the same

A nonvolatile memory device and a method of manufacturing the device, the device including a first semiconductor layer, the first semiconductor layer including an upper substrate, and a memory cell array, the memory cell array including a plurality of gate conductive layers stacked on the upper substrate and a plurality of pillars passing through the plurality of gate conductive layers and extending in a direction perpendicular to a top surface of the upper substrate; and a second semiconductor layer under the first semiconductor layer, the second semiconductor layer including a lower substrate, at least one contact plug between the lower substrate and the upper substrate, and a common source line driver on the lower substrate and configured to output a common source voltage for the plurality of pillars through the at least one contact plug.

Nonvolatile memory device and method of manufacturing the same

A method for controlling error check and correction (ECC) of a non-volatile memory device includes storing write data in a plurality of storing regions. The write data may be generated by performing ECC encoding. Individual ECC decoding may be performed based on each of a plurality of read data read out from the storing regions. Logic operation data may be provided by performing a logic operation of the read data when the individual ECC decoding fails with respect to all of the read data. Combined ECC decoding may be performed based on the logic operation data.

Method of controlling error check and correction (ECC) of non-volatile memory device and memory system performing the same

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Suwon-si, South Korea

Il-Han Park