Massachusetts Institute of Technology

Korea Institute of Science and Technology

Amogreentech Co., Ltd.

Il-Doo Kim

Harry L Tuller

Jae-Min Hong

Seong-Mu Jo

Yong Woo Choi

Akintunde Ibitayo Akinwande

Dong-Young Kim

Ytshak Avrahami

Sung-Yeon Jang

Avner Rothschild

Ho-Gi Kim

Sung-Chul Yang

Dong-Hun Kim

Nam-Gyu Cho

Yun-Seok Lee

The present invention provides a gas sensor, including: a sensor substrate provided with an electrode; and a thin layer of sensor material formed by spraying a solution in which metal oxide nanoparticles are dispersed onto the sensor substrate. The gas sensor is advantageous in that a sensor material is formed into a porous thin layer containing metal oxide nanoparticles having a large specific surface area, thus realizing high sensitivity on the ppb scale and a high reaction rate. Further, the gas sensor is advantageous in that it can be manufactured at room temperature, and the thickness of a sensor material can be easily adjusted by adjusting the spray time, so that a thin gas sensor or a thick gas sensor can be easily manufactured.

Gas sensor using metal oxide nanoparticles, and method for manufacturing same

A transfer layer includes a transparent substrate. A buffer layer is formed on the transparent substrate that comprises PbO, GaN, PbTiO, LaSrCoO(LSCO), or LaPbCoO(LPCO) so that separation between the buffer layer and the transparent substrate occurs at substantially high temperatures.

Fabrication of electronic and photonic systems on flexible substrates by layer transfer method

a composite dielectric thin film capable of high dielectric constant, low leakage current characteristics, and high dielectric breakdown voltage while being deposited at a room temperature, a capacitor and a field effect transistor (FET) using the same, and their fabrication methods. The composite dielectric thin film is deposited at a room temperature or less than 200&#xb0; C. and comprises crystalline or amorphous insulating filler uniformly distributed within an amorphous dielectric matrix or within an amorphous and partially nanocrystalline dielectric matrix.

Composite dielectric thin film, capacitor and field effect transistor using the same, and each fabrication method thereof

There is provided a metal oxide having a continuous nano-fiber network structure as a negative active material for a secondary battery. A method for fabricating such negative active material for a secondary battery comprises spinning a mixed solution of a metal oxide precursor and a polymer onto a collector to form composite fibers mixed with the metal oxide precursor and the polymer, thermally compressing or thermally pressurizing the composite fibers, and thermally treating the thermally compressed or thermally pressurized composite fibers to remove the polymer from the composite fiber.

Anode for secondary battery having negative active material with nano-fiber network structure and secondary battery using the same, and fabrication method of negative active material for secondary battery

A method for fabricating an ultra-sensitive metal oxide gas sensor is disclosed, which comprises the steps of spinning a mixture solution including a metal oxide precursor and a polymer onto a sensor electrode to form a metal oxide precursor-polymer composite fiber; thermally compressing or thermally pressurizing the composite fiber; and thermally treating the thermally compressed or thermally pressurized composite fiber to remove the polymer from the composite fiber. Since the gas sensor includes a macro pore between nanofibers and a meso pore between nano-rods and/or nano-grains, gas diffusion and surface area can be maximized. Also, the ultra-sensitive sensor having high stability in view of mechanical, thermal, and electrical aspects can be obtained through rapid increase of adhesion between the metal oxide thin layer and the sensor electrode.

Ultra-sensitive metal oxide gas sensor and fabrication method thereof

A BST microwave device includes a single crystal oxide wafer. A silicon dioxide layer is formed on the single crystal oxide layer. A silicon substrate is bonded on the silicon dioxide layer. A BST layer is formed on the single crystal oxide layer.

Integrated BST microwave tunable devices using buffer layer transfer method

A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.

Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications

A transparent thin film transistor device includes a transparent substrate, and a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature. A transparent semiconductor layer is disposed over the insulator layer.

High K-gate oxide TFTs built on transparent glass or transparent flexible polymer substrate

A tunable microwave device includes a SOI structure. A buffer layer is formed on the SOI structure. A microwave film layer is formed on the buffer layer. The microwave film layer comprises BST related materials.

Integrated BST microwave tunable devices fabricated on SOI substrate

A transistor device includes a transparent substrate. A high K dielectric is formed on the transparent substrate and transferred onto a flexible substrate. An organic transistor is formed on the high K dielectric.

Low-voltage organic transistors on flexible substrates using high-gate dielectric insulators by room temperature process

A BST microwave device includes a substrate and an insulating layer that is formed on the substrate. A buffer layer is formed on the insulating layer. A BST layer is formed on the buffer layer with a selected orientation for high tunability and possesses a low loss in a wavelength of interest.

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Seoul, South Korea

Il-Doo Kim