Hitachi, Ltd.

Hitachi Engineering Co., Ltd.

Ikuro Masuda

Masahiro Iwamura

Yukio Suzuki

Hideo Maejima

Shigeo Kuboki

Yoji Nishio

Shinji Kadono

Kazuo Kato

Akira Uragami

Hideaki Uchida

Masayoshi Yoshimura

Toshiaki Matsubara

Takao Sasayama

Katsumi Ogiue

Masanori Odaka

Masahiro Ueno

Kozaburo Kurita

Tatsumi Yamauchi

Takashi Hotta

Tetsuo Nakano

Motohisa Nishihara

Terumine Hayashi

Kouzaburou Kurita

Jinichi Sakurai

Takao Watanabe

Ryoichi Hori

Goro Kitsukawa

Shigeya Tanaka

Nobuaki Miyakawa

Shigeru Matsuoka

Kunihiko Yamaguchi

Hiroyuki Kida

Takeo Yuminaka

Nobuhiro Hamada

Norihiko Sugimoto

Hidekazu Matsumoto

Shigeo Shiono

Kazumi Hatayama

Shirou Baba

Takeshi Uno

Akihiko Takano

Sadahiro Ikeda

Noriyuki Honma

Shinji Matsuoka

Shyoichi Miyazawa

Osamu Isoo

Kiyoo Ito

Hisayoshi Shiraishi

Koji Kurokawa

Seiichiro Ogawa

Akira Urragami

Mitsuhiro Ikeda

Toshiaki Masuda

Akiro Uragami

A semiconductor integrated circuit memory device has at least two logic blocks, each logic block including at least two logic units and each logic unit having a number of metal oxide semiconductor field effect transistors (MOS FET's) integrated therein. Bipolar transistors for driving the MOS FET's are selectively arranged between the logic blocks and/or the logic units so as to shorten a critical path of a logic block. The memory device may include a word driver circuit having a bipolar transistor connected to MOSFETs in an address decoder and memory cells of the memory device. The memory device may also include a sense circuit having a bipolar transistor for high speed discharge of a bit line, as well as an output buffer including a bipolar transistor for reducing signal transmission delays in driving a bus.

Semiconductor memory device having bipolar and field effect transistors

A dynamic random access memory device is provided having a dynamic memory cell, a word line coupled to the dynamic memory cell, a data line coupled to the dynamic memory cell, a precharge circuit coupled to the data line, a word driver coupled to the word line and a decoder coupled to the word driver. A plurality of address lines coupled to the decoder. The decoder has a first logic circuit whose inputs are connected to the plurality of address lines. The decoder also has a latch circuit whose input is connected to an output of the first logic circuit and whose output is connected to the word line.

Dynamic random access memory having bipolar and C-MOS transistor

A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

Gate circuit of combined field-effect and bipolar transistors

In an input level converter for TTL--CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS--TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.

BiCMOS tri-state output driver

Level conversion circuitry for a semiconductor integrated circuit

A data processing system incorporating a main memory for storing instructions and operands and performing data processing in a mode of microprogram control system in response to instructions read out of the main memory. The system translates an instruction word read out of the main memory into an intermediate machine word having the orthogonal format, and addresses a microprogram memory in correspondence to the instruction word by analyzing the intermediate machine word. The system further incorporates a plurality of register sets so that each different task can use an individual register set, and a memory for memorizing the number of registers holding parameters used commonly among procedures corresponding to the register sets, so that the number of registers for each use can be changed arbitrarily for each register set by using the memory.

Data processing system with device for arranging instructions

A high speed and low power consumption semiconductor integrated circuit device has a plurality of internal circuits each including circuit elements for performing a desired circuit operation, a plurality of input circuits for receiving external input signals and supplying the signals to the internal circuits and a plurality of output circuits for receiving the output signals from the internal circuits and supplying signals to an external circuit. Each of the internal circuits is primarily constructed by bipolar transistors and MOS transistors, and at least one of each of the input circuits and each of the output circuits is primarily constructed by bipolar transistors.

Bipolar transistor MOS transistor hybrid semiconductor integrated

In order to provide high speed and low power consumption, a semiconductor integrated circuit is constructed to utilize both CMOS elements and bipolar transistors. The bipolar transistors are used in the output portions to take advantage of their speed of operation to allow rapid charging and discharging of output lines. In the meantime, the principal operating portions of the circuit use CMOS elements of low power consumption. This arrangement is particularly advantageous in memory circuits.

Semiconductor integrated circuit

In a semiconductor integrated circuit device having at least two logic blocks each including at least two logic units each having a number of MOS FET's integrated therein, bipolar transistors for driving the MOS FET's are selectively arranged between the logic blocks and/or the logic units so as to shorten the critical path of a logic block.

Semiconductor integrated circuit device with at least one bipolar

In an input level converter for TTL-CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS-TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.

Gate circuit of combined field-effect and bipolar transistors with an

There are provided a bipolar-MOS IC device smaller than half-micron scale, and a combination of such IC device and external circuits. The IC device has an internal voltage generating circuit for generating an internal power source by using an external power source, the voltage of the internal power source being lower than that of the external power source. The internal voltage generating circuit includes an NPN transistor formed in an N-type region or N-type island within a P-type semiconductor substrate of the IC device, and a PMOS transistor formed in the N-type island. The collector of the NPN transistor and the source of the PMOS transistor are used as external power source terminals. The drain of the PMOS transistor is connected to the base of the NPN transistor. The gate is used as a control signal terminal. The emitter of the NPN transistor is used as an internal power source output terminal. A current path from the external power source input terminal and the internal power source output terminal is accordingly formed within the N-type island isolated from the P-type substrate.

Bipolar-MOS IC with internal voltage generator and LSI device with

A semiconductor integrated circuit is provided for performing an arithmetic operation using an arithmetic operation circuit. The integrated circuit includes a read bus for connecting the arithmetic operation circuit with a plurality of registers which store input data and/or output data of said arithmetic operation circuit. A precharge and sense circuit connects said arithmetic operation circuit to said read bus. The precharge and sense circuit includes a precharge circuit to precharge the read bus to a first level before the read operation, and a sense circuit to detect that the level of the read bus has discharged to a second, lower level after the read operation begins. In this way, the integrated circuit can detect very slight potential variations on said read bus.

Semiconductor integrated circuit for performing an arithmetic operation

In an input level converter for TTL - CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS - TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.

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Hitachi, Japan

Ikuro Masuda