Sony Corporation

Sony Semiconductor Solutions Corporation

Ikuo Yoshihara

Hiroshi Takahashi

Masamitsu Yamanaka

Taku Umebayashi

Hironobu Yoshida

Makoto Motoyoshi

Hideki Hirano

Akiko Ogino

Kenju Nishikido

Haruhiko Ajisawa

Iwao Sugiura

Kazuaki Kurooka

Ryoji Suzuki

Kazuichiro Itonaga

Takashi Machida

Toshihiko Hayashi

Hiroshi Yoshioka

Atsushi Masagaki

Hiroyasu Matsugai

Masaya Nagata

Keishi Inoue

Shinichiro Izawa

Naoto Sasaki

Yoichi Otsuka

Suzunori Endo

Tokihisa Kaneguchi

Kyohei Yoshimura

Kazuo Ohta

Isaya Kitamura

Mayoshi Aonuma

Wataro Futo

A semiconductor image sensor moduleat least includes a semiconductor image sensor chiphaving a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chipfor processing image signals formed in the semiconductor image sensor chip, wherein a plurality of bump electrodesare formed on a first main surface, a plurality of bump electrodesare formed on the image signal processing chip, both the chipsandare formed to be laminated through heat dissipating meansand the plurality of bump electrodesof the semiconductor image sensor chipand the plurality of bump electrodeson the image signal processing chipare electrically connected.

Semiconductor image sensor module, method for manufacturing the same as well as camera and method for manufacturing the same

A solid-state imaging device includes: a photodiode formed to be segmented with respect to each pixel in a pixel area in which plural pixels are integrated on a light receiving surface of a semiconductor substrate; an insulator film formed on the semiconductor substrate to cover the photodiode; a recessed part formed with respect to each of the pixels in the insulator film in an upper part of the photodiode; a first light transmission layer of a siloxane resin formed to fill the recessed part and configure an optical waveguide in the pixel area; a second light transmission layer formed to configure an on-chip lens with respect to each of the pixels in the pixel area; and a guard ring formed to surround an outer circumference of the pixel area to partition an inner area containing the pixel area and an outer dicing area.

Solid-state imaging device

The present disclosure relates to a solid-state image pickup device and an electronic apparatus capable of generating highly-accurate image pickup signals having a large dynamic range. Pixels each include a high-sensitivity pixel and a low-sensitivity pixel having a lower sensitivity than the high-sensitivity pixel. A control gate controls a potential of a photoelectric conversion device of the low-sensitivity pixel. The present disclosure is applicable to, for example, a CMOS image sensor that includes both the high-sensitivity pixel and the low-sensitivity pixel having a lower sensitivity than the high-sensitivity pixel and controls a potential of the photoelectric conversion device of the low-sensitivity pixel.

Solid-state image pickup device and electronic apparatus including a solid-state image pickup device having high and low sensitivity pixels

A solid-state imaging device with a semiconductor substrate; a pixel formation region in the substrate and including a pixel made of a photoelectric conversion element; and an element isolation portion in the substrate and including an element isolation insulating layer and an impurity element isolation region. The element isolation insulating layer is positioned in a surface of the substrate. The impurity element isolation region is positioned under the element isolation insulating layer and within the substrate. The impurity element isolation region has at least a portion with a width that is narrower than that of the element isolation insulating layer. The photoelectric conversion element extends to a position under the element isolation insulating layer of the element isolation portion.

Solid-state imaging device and method of manufacturing the same

The present disclosure provides a method of manufacturing a solid-state imaging device, including, forming on a first substrate a semiconductor thin film which is to be photoelectric conversion sections, forming driving circuits on a face side of a second substrate, laminating the first substrate and the second substrate by disposing the first substrate and second substrate opposite to each other in a condition in which the semiconductor thin film is connected to the driving circuits, and removing the first substrate from the semiconductor thin film in a condition in which the semiconductor thin film is left on the second substrate side.

Method of manufacturing solid-state imaging device, solid-state imaging device, and electronic apparatus

Semiconductor imaging device having ligth transmission layers formed relative to a guard ring structure in a predetermined manner

A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip includes a second wiring portion of which a side surface is exposed at a side portion of the second semiconductor chip. The respective side surfaces of the first wiring portion and the second wiring portion, which are exposed at the side portions of the first semiconductor chip and the second semiconductor chip, are covered by a conductive layer, and the first wiring portion and the second wiring portion are electrically connected to each other through the conductive layer.

Semiconductor device, manufacturing method therefor, and electronic apparatus

Growing community of inventors

Kanagawa, Japan

Ikuo Yoshihara