Kabushiki Kaisha Toshiba

Kioxia Corporation

Tohoku University

Toshiba Electronic Devices & Storage Corporation

Ikuo Uematsu

Naoya Hayamizu

Kayoko Oomiya

Ichiro Tono

Tomohiro Takase

Kenya Uchida

Shingo Kasai

Yoko Tokuno

Tomomichi Naka

Hideo Eto

Masaomi Nakahata

Masaaki Hirakawa

Isao Nawata

Hiroyuki Fukui

Tsutomu Honjoh

Naoaki Sakurai

Hideaki Morishima

Masami Hirata

Yuma Kikuchi

Kenichi Uchiyama

Isao Kishimoto

Yukako Murakami

Eunsang Kwon

Yuriko Oyama

Takeaki Iwamoto

Takashi Kobayashi

Naotada Okada

Kazuhiko Mori

Shinichi Sasaki

Makoto Saito

Yasutada Nakagawa

Kenta Fukatsu

Shinya Ito

Toma Yorisaki

Kengo Furutani

Masatoshi Sakai

Masanori Sugitani

Takahiro Kanai

According to one embodiment, a determination method is provided. The determination method determines progress of a treatment of a side-product produced in a process of reacting a substance containing a halogen and silicon or reacting a substance containing silicon and a substance containing a halogen. The treatment of the side-product includes bringing the side-product into contact with a treatment fluid containing water to obtain a first solid matter. The determination method includes determining the progress of the treatment of the side-product based on a signal according to a chemical analysis of at least one of an Si-α bond (α is at least one selected from the group consisting of F, Cl, Br, and I) and an Si—H bond, of the first solid matter.

Determination method and treatment method

According to an embodiment, a process apparatus performs processing on a byproduct generated in a reaction of a raw material including silicon and a halogen element or in a reaction between a raw material including silicon and a raw material including a halogen element. The apparatus includes a process liquid tank, a processing tank, a supplier and an exhauster. A process target member including the byproduct is introduced into the processing tank. The supplier supplies the process liquid from the process liquid tank to the processing tank and performs processing on the byproduct with the supplied process liquid. The exhauster exhausts a gas generated by reaction between the process liquid and the byproduct from the processing tank.

Process apparatus and process method

According to one embodiment, a silicon-containing product forming apparatus includes a reaction chamber, an emission path, a process liquid tank, a supplier, and a flow path switcher. The emission path emits an emission material from the reaction chamber. The supplier includes a supply line configured to supply a process liquid to the emission path from the process liquid tank, and a byproduct generated by reaction is treated in the emission path by the supplied process liquid. The flow path switcher switches the communication state of the emission path with each of the reaction chamber and the supply line of the supplier.

Silicon-containing product forming apparatus

According to one embodiment, a fiber sheet includes a plurality of fibers. The plurality of fibers are in a closely-adhered state. All of the following (1) to (3) are satisfied, where F1 is a tensile strength in a first direction, and F2 is a tensile strength in a second direction orthogonal to the first direction: (1) F2&#x3e;F1; (2) F1 is 1 MPa or more; and (3) F2/F1 is 2 or more.

Fiber sheet and method for manufacturing same

According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.

Etching solution, additive, and etching method

According to one embodiment, an electrode structure is provided. The electrode structure includes an electrode and a separator. The electrode includes an active material-containing layer. The separator includes a layer provided on a main surface of the active material-containing layer. The layer includes organic fibers and a resin mass. The resin mass is in contact with a portion of the main surface of the active material-containing layer. The resin mass is integrated with a portion of the organic fibers. When a length of the resin mass is represented by a circumscribed quadrilateral of the resin mass, a length of a first side of the circumscribed quadrilateral and a length of a second side adjacent to the first side are each 10 &#x3bc;m or more.

Electrode structure and secondary battery

According to one embodiment, a stripping liquid is provided. The stripping liquid is for removing a support plate from a stack. The stack includes a substrate, the support plate, and an adhesive. The Adhesive is placed between the substrate and the support plate. The adhesive includes a compound. The compound has a first functional group and a second functional group differing from each other. The stripping liquid includes a first solvent and a second solvent. The second solvent have a polarity higher than the first solvent.

Stripping liquid, stripping method, and electronic-component fabricating method

According to one embodiment, a laminate includes a first active material-containing layer, a first film and a second film. The first film includes an inorganic material, and a back surface thereof is in contact with a front surface of the first active material-containing layer. The second film includes organic fibers, and one of front and back surfaces is in contact with a front surface of the first film. An absolute value of a difference between surface roughness Raof the front surface of the first active material-containing layer and surface roughness Raof the back surface of the first film is 0.6 &#x3bc;m or less (including 0).

Laminate and secondary battery

According to one embodiment, an etching solution used for etching of silicon nitride is provided. The etching solution includes phosphoric acid, an acid, silicic acid compound, and water. The phosphoric acid has a first acid dissociation exponent pK. The acid has an acid dissociation exponent smaller than the first acid dissociation exponent pK. A mass ratio M/Mof mass Mof the phosphoric acid to mass Mof the acid having the acid dissociation exponent smaller than the first acid dissociation exponent pKis within a range of 0.82 or more and 725 or less.

Etching solution, etching method, and method for manufacturing an electronic component

An electrospinning apparatus according to an embodiment is configured to deposit a fiber on a collector or a member. The electrospinning apparatus includes a first nozzle head provided on one side of the collector or the member, and a second nozzle head provided on the side opposite to the first nozzle head with the collector or the member interposed. The first nozzle head and the second nozzle head are at a section where the collector or the member moves in a direction tilted with respect to a horizontal direction.

Electrospinning apparatus

According to one embodiment, there is provided a structural body including a core composed of fiber and a support, which is a component of the core and is in contact with the core.

Structural body and core

According to one embodiment, a fiber sheet includes a plurality of fibers. The plurality of fibers are in a closely-adhered state. All of the following () to () are satisfied, where Fis a tensile strength in a first direction, and Fis a tensile strength in a second direction orthogonal to the first direction:

According to one embodiment, the secondary battery includes a container, an electrode structure provided in the container and an electrolyte provided in the container. The electrode structure includes a positive electrode, a negative electrode, and a separator provided between the positive electrode and the negative electrode. The separator includes an organic fiber layer accumulated on at least one of the positive electrode and the negative electrode. The organic fiber layer has contacts in which the organic fiber intersects with itself. The form of the intersections is changed by a tensile stress.

Secondary battery

According to one embodiment, a nanofiber manufacturing-apparatus nozzle head includes a plurality of holes. A solution is ejected from the holes. The holes are arranged from a center of the nozzle head toward an end portion of the nozzle head. An interval of adjacent holes decreases away from the center.

Nanofiber manufacturing-apparatus nozzle head and nanofiber manufacturing apparatus with the same

According to the embodiment, a nanofiber manufacturing device that includes an ejector and a power generator is provided. The ejector is capable of ejecting a solution from a head portion toward a target. The power generator generates a potential difference between the head portion and the target. The head portion includes a first guide having a first surface and a second guide having a second surface, the first surface and the second surface making a gap, the gap being capable of maintaining the solution. A tip of at least one of the first guide and the second guide includes a maintain portion provided so as to be capable of maintaining the solution.

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Yokohama, Japan

Ikuo Uematsu