Tokyo Electron Limited

Rohm Co., Ltd.

Ikuo Sawada

Lee Chen

Akira Koshiishi

Tatsuro Ohshita

Kazuyoshi Matsuzaki

Songyun Kang

Shigeru Kasai

Mitsuaki Iwashita

Peter Ventzek

Peter L G Ventzek

Masatoshi Aketa

Naoki Shindo

Tsutomu Hiroki

Takashi Tanaka

Jun Yoshikawa

Tsunenobu Kimoto

Kyoko Ikeda

Noriaki Kawamoto

Ayuta Suzuki

Masatake Yoneda

Eisuke Morisaki

Hirokatsu Kobayashi

Sumie Nagaseki

Kazuhiro Ooya

Yoshiki Fukuhara

Peter Lg Ventzek

Mizue Munakata

A vaporizing unit, in supplying a gas material produced by vaporizing a liquid material onto a substrate to conduct a film forming process, can vaporize the liquid material with high efficiency to suppress generation of particles. With the vaporizing unit, positively or negatively charged bubbles, which have a diameter of 1000 nm or less, are produced in the liquid material, and the liquid material is atomized to form a mist of the liquid material. Further, the mist of the liquid material is heated and vaporized. The fine bubbles are uniformly dispersed in advance in the liquid material, so that very fine and uniform mist particles of the liquid material are produced when the liquid material is atomized, which makes heat exchange readily conducted. By vaporizing the mist of the liquid material, vaporization efficiency is enhanced, and generation of particles can be suppressed.

Vaporizing unit, film forming apparatus, film forming method, computer program and storage medium

A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.

Plasma processing apparatus, plasma processing method and storage medium

Disclosed is a liquid processing apparatus that processes a substrate with a processing liquid. The processing apparatus includes: a substrate holder configured to hold the substrate; a processing liquid supply unit configured to supply the processing liquid to the substrate held by the substrate holder; a rinsing liquid supply unit configured to supply a rinsing liquid to the substrate; and a light emitting element configured to emit light of a wavelength range, which is absorbed only by the substrate, and irradiate the emitted light to the substrate.

Liquid processing apparatus, liquid processing method, and recording medium having program for executing liquid processing method recorded therein

A conveyance device, which conveys wafers in a casing, includes a primary blowing fanthat generates airflow within the casingin a first direction; a discharge openingthat is located at a downstream side of the airflow generated by the primary blowing fan, is interconnected with the interior of the casing, and discharges gases at the interior of the casingoutside of the casing; a basethat is supported by a gate-shaped conveyance armdisposed within the casingand moves within the casingat the upstream side of the discharge openingand at the downstream side of the primary blowing fan; an end effectorthat is located at the baseand that carries wafers; and a blowing fanthat is located at the base and that generates airflow in the first direction.

Conveyance device and substrate processing system

A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.

Film deposition apparatus and film deposition method

A plasma processing apparatus performs a process on a substrate by using plasma. The plasma processing apparatus includes a processing chamber; a mounting table which is located in the processing chamber and on which a substrate is mounted; a gas shower head formed of a conductive material provided to face the mounting table and having at the bottom surface thereof a plurality of gas injection openings for supplying a processing gas into the processing chamber; an induction coil to which a high frequency current is supplied to generate an inductively coupled plasma in a region surrounding a space below the gas shower head; a negative voltage supplying unit for applying a negative DC voltage to the gas shower head to allow an electrical field, which is induced by the induction coil, to be drawn to a central portion of the processing region; and a unit for evacuating the processing chamber.

Plasma processing apparatus and method

A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with an oxygen-containing plasma or halogen-containing plasma or a noble gas plasma or a combination of two or more thereof prior to proceeding with the etching process.

Method of treating a mask layer prior to performing an etching process

A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with an electron beam in the absence of an atomic halogen specie prior to proceeding with the etching process.

A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with a hydrocarbon chemistry or hydrofluorocarbon chemistry or fluorocarbon chemistry or combination of two or more thereof prior to proceeding with the etching process.

Growing community of inventors

Nirasaki, Japan

Ikuo Sawada