Sharp Kabushiki Kaisha Corporation

Other

Jsr Corporation

Sharp Corporation

International Center for Materials Research

Ikuo Sakono

Kazuki Kobayashi

Hiroaki Kato

Motokazu Inui

Tadahiro Ohmi

Shigetoshi Sugawa

Akihiro Morimoto

Kimiaki Fujino

Hiroshi Hamada

Hideo Ohno

Hirofumi Sasaki

Masashi Kawasaki

Yasuo Matsuki

Yasumasa Takeuchi

Tadanori Hishida

Yasuaki Yokoyama

Kazuaki Niwa

Shinji Shiraki

A method of making a substrate having a buried structure includes the steps of preparing a glass substrate having a principal surface, forming a groove on the principal surface of the glass substrate by a wet etching process, and depositing a first material over the principal surface of the glass substrate and filling the groove with the first material to form the buried structure having a surface that is substantially flush with the principal surface. The step of forming the groove includes the step of performing the wet etching process by using an etchant that includes hydrofluoric acid, ammonium fluoride, and hydrochloric acid or oxalic acid.

Method of making a substrate having buried structure and method for fabricating a display device including the substrate

The invention provides a radiation-sensitive resin composition, by which a patterned insulation film whose water repellency varies is easily formed with high precision, a process for forming a patterned insulation film using this composition, a display element and an flat-panel disply device using the composition, and a process for producing the flat-panel disply device. The resin composition comprises (A) an alkali-soluble copolymer, (B) a 1,2-quinonediazide compound and (C) a water-repellent siloxane resin in particular proportions. In the production process of the patterned insulation film, patterning exposure and development are conducted on a coating formed of the resin composition. The display element and flat-panel disply device are equipped with an interlayer insulation film formed by the resin composition. The production process of the flat-panel disply device comprises an interlayer insulation film-forming step including a treatment of patterning exposure exposing conductor layer-forming regions in an exposure that only surface layer portions are cured in one part thereof, and the whole in the thickness-wise direction thereof is cured in the other parts, and a conductor layer-forming step of forming conductor layers on the surface of the interlayer insulation film with a liquid material.

Radiation-sensitive resin composition, forming process for forming patterned insulation film, active matrix board and flat-panel display device equipped with the same, and process for producing flat-panel display device

There are provided a conductive film forming composition capable of forming wiring or an electrode which can be suitably used in a variety of electronic devices, easily and inexpensively, a method for forming a film using the composition, a conductive film formed by the method, and wiring or an electrode which comprises the film. A conductive film forming composition comprising a complex of an amine compound and aluminum hydride and an organic solvent is applied on a substrate and then subjected to a heat treatment and/or irradiation with light, whereby a conductive film such as an electrode or wiring is produced.

Conductive film forming composition, conductive film, and method for forming the same

Substrate having buried structure, display device including the substrate, method of making the substrate and method for fabricating the display device

In a thin film transistor, a gate insulating film having a first insulating film and a second insulating film is formed on a gate electrode, and a semiconductor layer including ZnO etc. is formed on the second insulating film. The first insulating film is formed by using SiN having a high insulating characteristic, and the second insulating film is formed by using an oxide (for example, SiO ). This structure improves a crystalline characteristic of the semiconductor layer that constitutes an interface in combination with the second insulating film, and decreases a defective level of the interface between the semiconductor layer and the second insulating film. Further, the second insulating film is constituted of the oxide, so that it is possible to restrain a material for the second insulating film from depriving oxygen of the semiconductor layer. This keeps a crystalline characteristic of the semiconductor layer under a preferable condition in the vicinity of the interface between the second insulating film and the semiconductor layer. As a result, it is possible to realize a thin film transistor such that: a leak current level at an OFF area is low, and the mobility is high, and a switching characteristic is preferable. Thus, in the thin film transistor having a transparent semiconductor film, a TFT characteristic is improved.

Thin film transistor and matrix display device

A liquid crystal display device is described which contains picture element electrodes arranged on an insulating substrate and thin film transistors for switching the voltage to be applied to the picture element electrodes. The device is characterized in that additional capacity electrodes are formed from the same material as electrodes of the thin film transistors, between the insulating substrate and the picture element electrodes.

Method of fabricating a liquid crystal display device

Liquid crystal display device

A liquid crystal active-matrix display device is disclosed in which the edge portion of each of the gate electrodes overlaps the edge portion of each of the picture element electrodes to form an additional capacitor. The gate electrodes are made of tantalum, and a first insulating film of tantalum pentoxide and a second insulating film of silicon nitride are disposed in a gap between each of the gate electrodes and each of the picture element electrodes. This thereby provides additional capacitors with a large capacity at a high yield, with little affect on other processes.

Liquid crystal active-matrix display device

A liquid crystal display element for matrix display, employing, as address elements, thin film transistors each having a layered arrangement of a gate electrode, an insulating film, a semiconductor film, a source electrode, a drain electrode and a display picture element electrode formed in that order on an insulating substrate. The liquid crystal display element is characterized by a thin metallic film for smoothing path lines for the source electrodes, formed of the same material as that forming the gate electrodes in a plane including the gate electrodes.

Liquid crystal display element

Growing community of inventors

Soraku-gun, Japan

Ikuo Sakono