Kyocera Corporation

Ikuo Obara

Kiyohiro Iioka

Daisuke Makibuchi

Kunihiko Muraoka

Hiroyuki Tanaka

Tsuyoshi Nakai

Atsuomi Fukuura

Kazuhiro Otsuka

A surface acoustic wave device configured by forming an oxide layeron a piezoelectric substratecomposed of a lithium tantalate single crystal or a lithium niobate single crystal and having weak pyroelectric properties having a lower oxygen content than a stoichiometric composition ratio, and forming thereon an IDT electrode. There is no static destruction of a minute electrode due to the pyroelectric effect of the piezoelectric substrate having weak pyroelectric properties, and frequency characteristics are not degraded.

Surface acoustic wave device and manufacturing method therefor, and communications equipment

A plurality of IDT electrodestoeach having a large number of electrode fingers extending in a direction perpendicular to a propagation direction of a surface acoustic wave propagating on a piezoelectric substrateare arranged on the piezoelectric substratealong the propagation direction, and each of the two adjacent IDT electrodes out of the plurality of IDT electrodestocomprises a variable pitch section and a fixed pitch section. The electrode finger pitch in the variable pitch section gradually decreases toward the boundary between the two adjacent IDT electrodes, and the minimum electrode finger pitch portion in the two variable pitch sections is on one side spaced apart from the boundary. There can be provided a surface acoustic wave apparatus having a large pass bandwidth, having a low insertion loss, and having improved flatness in a pass band.

Surface acoustic wave resonator, surface acoustic wave device, and communications equipment

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Kyoto, Japan

Ikuo Obara