Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Kioxia Corporation

Ikuo Magaki

Tokumasa Hara

Shirou Fujita

Hiroshi Sukegawa

Kenichiro Yoshii

Naoto Oshiyama

Kenta Yasufuku

Yoshihisa Kojima

Kosuke Hatsuda

Hiroshi Yao

Kohei Oikawa

Naomi Takeda

Katsuhiko Ueki

Ryo Yamaki

Daisuke Iwai

Akira Yamaga

Naoaki Kokubun

Satoshi Kaburaki

Yu Nakanishi

Tatsuya Zettsu

Arata Miyamoto

Takashi Ogasawara

A controller controls a memory including first and second strings. The first and second strings configure first and second string groups, respectively. In each string group, a set of memory cell transistors each from each string configures a unit. The controller is configured to: sequentially write, in the first string group, data in first units to which serially-coupled memory cell transistors respectively belong; sequentially write, in the second string group, data in first units to which serially-coupled memory cell transistors respectively belong; and sequentially write, in the first string group, data in second units to which serially-coupled memory cell transistors respectively belong.

Memory system including semiconductor memory and controller

Information processing system

Semiconductor memory device

According to one embodiment, a memory system is provided with a nonvolatile memory, a controller, a volatile memory and an address translation table. The address translation table includes a high level and a plurality of low levels. The high level indicates positions in the nonvolatile memory in which the low levels are recorded. The low levels indicate positions in the nonvolatile memory in which data is recorded. The controller holds the high level of the address translation table in the first area of the volatile memory, and shuts off the supply of power to the second area of the volatile memory based on a transition from a normal-power state to a low-power state.

Reduction of power use during address translation via selective refresh operations

Semiconductor memory device including a controller performing write processes

3D vertical NAND semiconductor memory device and methods thereof

According to one embodiment, a memory controller includes a first volatile memory, a second volatile memory, and a controller. The first volatile memory temporarily stores therein data acquired from outside. The controller controls the temporarily stored data to be transferred from the first volatile memory to a non-volatile memory, stores correspondence information of the transferred data to the non-volatile memory in the second volatile memory, and updates correspondence information stored in the non-volatile memory based on the correspondence information stored in the second volatile memory by using the first volatile memory after the data transfer as a work area. The correspondence information represents association between a logical address and a physical address of the data.

Memory controller, memory system and memory control method

Semiconductor memory device including strings including memory cell transistors

A memory system includes a first nonvolatile memory, a second nonvolatile memory with a longer access latency than the first nonvolatile memory, a first error correction unit, a second error correction unit, and an interface. The first nonvolatile memory stores first data and a first error correction code generated for the first data. The second nonvolatile memory stores a second error correction code which is generated for the first data with a higher correction ability than that of the first error correction code. The first error correction unit performs error correction on the first data by using the first error correction code. The second error correction unit performs error correction on the first data by using the second error correction code. The interface transmits the first data after the error correction to a host.

Memory system

A storage device according to an embodiment includes first and second non-volatile semiconductor memories. In addition, the storage device includes first controller that controls the first non-volatile memory to cause the first non-volatile memory to perform processes. In addition, the storage device includes second controller that controls the second non-volatile memory to cause the second non-volatile memory to perform processes. The storage device further includes a signal line which is connected to the first controller and the second controller and through which a token is transmitted between the first controller and the second controller. The first controller is capable of controlling the first non-volatile memory while holding the token and the second controller is capable of controlling the second non-volatile memory while holding the token.

Storage device

Growing community of inventors

Kawasaki, Japan

Ikuo Magaki