Sharp Kabushiki Kaisha Corporation

Ikuo Kohashi

Takeshi Horiguchi

Osamu Hamaoka

Takehiro Shiomoto

Hajime Kashida

Shin Satoh

A semiconductor chipis mounted on an island sectionin a lead frame composed of a lead having the island section, a ground-bonding lead sectionand a leadeach continuing in sequence, and other lead terminal sectionsto, and then a grounding electrodeand other electrodestofor the semiconductor chip are respectively wire-bonded to the leadand other lead terminalstoby gold wirestobefore being embedded in a resin to form a package. The lead with the semiconductor chipmounted thereon is structured so that the ground-bonding lead sectioncontinuing to both the leadand the island sectionare absent on both the sides of the wire-bonding regionwith respect to the island sectionin the longitudinal section along the grounded gold wire

Semiconductor device, lead frame used in the semiconductor device and electronic equipment using the semiconductor device

In a semiconductor laser device, a semiconductor laser chip is placed on a stem so that an end surface of the semiconductor laser chip, on which the main radiation side light emission point is located, protrudes from an edge of a header portion of the stem or from an edge of a header portion of a sub-mount provided on the stem so as to conceal no light emission points of the semiconductor. A conductive die bonding paste is used for the die bonding of the semiconductor laser chip. A chamfered portion or a rounded corner portion is formed at the edge of the header portion of the stem or the edge of the header portion of the sub-mount provided on the stem. Also, an optical pickup is constructed of at least the semiconductor laser device, a diffraction grating, a photodetector, a condenser lens and an object lens.

Semiconductor laser device, fabricating method thereof and optical pickup employing the semiconductor laser device

In a method of producing a semiconductor laser apparatus, a conductive die-bonding paste is applied to a bonding surface in a predetermined position thereof and then preheated at a temperature equal to or higher than a temperature at which a diluent of the conductive die-bonding paste starts to transpire, but lower than a temperature at which the conductive die-bonding paste starts a thermosetting reaction. Then, with a semiconductor laser chip placed on the preheated conductive die-bonding paste, the latter is heated to be hardened. In the thus produced semiconductor laser apparatus, a highest position at which the conductive die-bonding paste adheres to end surfaces of the semiconductor laser chip is at a height of more than 0.01 mm from the bonding surface, but is below light-emitting points of the semiconductor laser chip.

Semiconductor laser apparatus and method of producing the same

A semiconductor laser device ( ) comprises a first semiconductor laser element ( ) and a second semiconductor laser element ( ) of different wavelengths, which are mounted on a heat sink block ( ) directly or through a sub-mount provided on the heat sink block. The optical axes (A, B) of the semiconductor laser elements are substantially parallel to each other. The first and second semiconductor laser elements ( ) are mounted on the heat sink block ( ) in such a manner that a relationship of 0&lE;L&lE;d &plus;d &lE;160 &mgr;m is satisfied, where d is a distance between the optical axis (A) of the first semiconductor laser element ( ) and the center axis (O) of a condenser lens ( ) arranged in front of the semiconductor laser device (i.e., faced to the emission surfaces of the semiconductor laser elements), d is a distance between the optical axis (B) of the second semiconductor laser element ( ) and the center axis of the condenser lens, and L is a distance between the optical axes of the first and second semiconductor laser elements.

Semiconductor laser device

A photocoupler comprises a light-emitting element and a light-receiving element which are optically coupled through a soft light-transmissive resin and covered by a light-blocking resin. The light-emitting element is covered by a light-transmissive protective hard resin and hence is protected against external pressure.

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Gojo, Japan

Ikuo Kohashi