Fujitsu Quantum Devices Limited

Ikuo Hanawa

Yoshihiro Yoneda

A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.

Semiconductor photodetection device

A photodetector includes an optical absorption layer having a thickness d optimized with regard to a voltage applied across the optical absorption layer such that there occurs an increase of optical absorption coefficient at the wavelength of 1580 nm or longer.

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Yamanashi, Japan

Ikuo Hanawa