Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Ikuko Aoki

Makoto Horiuchi

Toshio Mori

Takaari Uemoto

Tatsuo Otsuki

Yoshio Manabe

Atsushi Motoya

Kazuyuki Okano

Hiroshi Yagi

Juichi Sasada

Akio Shimano

Masaki Mishima

Kazuo Saimoto

Hideaki Tokiyasu

Hidefumi Okada

Hiromitsu Aoki

A light-emitting module includes a substrate, an LED chip arranged on a main surface of the substrate, a sealing member covering the LED chip on the main surface of the substrate and converting a wavelength of the light produced by the LED chip, and a heat transfer member thermally connecting the sides of the LED chip to the main surface of the substrate and dissipating heat produced by the LED chip to the substrate. The heat transfer member is made up of a silicone resin having particles dispersed therein, the particles being nanoparticles of ZrOand microparticles of MgO, which have higher thermal conductivity than the silicone resin.

Light-emitting module and lamp using same

To constrain reductions in luminous efficacy while enhancing the color rendition index, the LED module includes a blue LED, at least one variety of phosphor particles excited by the outgoing light from the blue LED, and neodymium glass particles that include neodymium ions absorbing the outgoing light from the phosphor particles in a predetermined wavelength band.

LED module, LED lamp, and illuminating apparatus

The present invention presents a method for recycling a cathode ray tube bulb comprising a panel and a funnel fritted together with a frit glass. The panel and the funnel are separated by dissolving at least a portion of the frit glass with a solution of an organic acid, such as an aqueous carboxylic acid solution, and a cathode ray tube bulb is obtained using at least one of the panel and the funnel.

Method for recycling cathode ray tube bulb

A buffered FET logic gate circuit has a bias diode (9), which is connected across the gate and the source of a current source FET (4) of a buffer part (3, 4), and a capacitor (8), which is connected across the gate of said FET (4) and an input terminal (V.sub.I); and thereby a high load drivability with a low power consumption rate is realized.

Buffered FET logic gate using depletion-mode MESFET's.

Growing community of inventors

Osaka, Japan

Ikuko Aoki