Ngk Insulators, Inc.

Ikuhisa Morioka

Tatsuya Kuno

Hideyoshi Tsuruta

Yasufumi Aihara

Tetsuya Kawajiri

Kenichiro Aikawa

Kazuhiro Nobori

Seiya Inoue

Akiyoshi Hattori

Takashi Kataigi

Masahito Eguchi

A wafer placement table includes: a ceramic plate having a wafer placement surface on its upper surface and incorporating an electrode; an electrically conductive plate provided on a lower surface side of the ceramic plate; an electrically conductive bonding layer that bonds the ceramic plate with the electrically conductive plate; a gas intermediate passage embedded in the electrically conductive bonding layer or provided at an interface between the electrically conductive bonding layer and the electrically conductive plate; a plurality of gas supply passages extending from the gas intermediate passage through the electrically conductive bonding layer and the ceramic plate to the wafer placement surface; and a gas introduction passage provided so as to extend through the electrically conductive plate and communicate with the gas intermediate passage, the number of the gas introduction passages being smaller than the number of the gas supply passages communicating with the gas intermediate passage.

Wafer placement table

An electrostatic chuck assembly includes a ceramic body having a wafer placement surface that is a circular surface, and an F/R placement surface that is formed around the wafer placement surface and is positioned at a lower level than the wafer placement surface, a wafer attraction electrode embedded inside the ceramic body and positioned in a facing relation to the wafer placement surface, an F/R attraction electrode embedded inside the ceramic body and positioned in a facing relation to the F/R placement surface, a concave-convex region formed in the F/R placement surface to hold gas, a focus ring placed on the F/R placement surface, and a pair of elastic annular sealing members arranged between the F/R placement surface and the focus ring on the inner peripheral side and the outer peripheral side of the F/R placement surface, and surrounding the concave-convex region in a sandwiching relation.

Electrostatic chuck assembly, electrostatic chuck, and focus ring

An electrostatic chuck includes a first ceramic member disk-shaped and having an annular step surface outside a circular wafer holding surface thereof, the annular step surface being at a lower level than the wafer holding surface, the first ceramic member having a volume resistivity that allows Coulomb force to be exerted; a first electrode embedded in the first ceramic member at a position facing the wafer holding surface; a second electrode disposed on the annular step surface of the first ceramic member, the second electrode being independent of the first electrode; and a second ceramic member having an annular shape and configured to cover the annular step surface having the second electrode thereon, the second ceramic member having a volume resistivity that allows Johnsen-Rahbek force to be exerted, wherein an upper surface of the second ceramic member is a focus ring holding surface on which a focus ring is placed.

Electrostatic chuck and method for manufacturing the same

An electrostatic chuck with a heater includes: a base formed of a sintered body containing alumina; an ESC electrode provided in an upper portion side in the base; and a resistance heating body embedded in a lower portion side in the base. The base is composed of a dielectric layer from the ESC electrode to an upper surface of the base, and of a support member from the ESC electrode to a lower surface of the base. In the support member, a carbon content differs between an ESC electrode neighborhood in contact with the dielectric layer and a lower region below the ESC electrode neighborhood, a carbon content in the dielectric layer is 100 wt ppm or less, the carbon content in the ESC electrode neighborhood is 0.13 wt % or less, the carbon content in the lower region is 0.03 wt % or more and 0.5 wt % or less, and the carbon content in the ESC electrode neighborhood is smaller than the carbon content in the lower region. The resistance heating body contains niobium or platinum.

Electrostatic chuck with heater and manufacturing method thereof

A heating device has a ceramic base with a heating surface, and a heating body embedded in the ceramic base. The heating device includes a thermal conductive member positioned between the heating surface and the heating body in the ceramic base. The thermal conductive member has a thermal conductivity that is higher than the ceramic base and as such, the heating device achieves superior temperature uniformity of a heated object particularly in a semiconductor device manufacturing process.

Heating device

An electrostatic chuck includes a ceramic base having an electrode embedded in vicinity to a holding face for holding a substrate. On a back side of this ceramic base, provided are a terminal connected to the electrode, a wafer temperature control member, and an insulating member for insulating the temperature control member from the terminal. This insulating member has a flange portion on its end portion in contact with the ceramic base, and is made of highly thermal conductive ceramics.

Electrostatic chuck

An electrostatic adsorption device has a dielectric layer, electrodes, a cooling member and an insulating adhesive. The dielectric layer is made of a ceramic dielectric material and has an adsorption face and a back face. The electrodes are provided on the back face of the dielectric layer and gaps are defined between the portions of the electrodes. The insulating adhesive is provided between the back face of the dielectric layer and the cooling member. The insulating adhesive covers the electrodes and the back face and is provided in the gaps.

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Handa, Japan

Ikuhisa Morioka