Sony Corporation

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Ikuhiro Yamamura

Takashi Abe

Yusuke Oike

Takahiro Kawamura

Takashi Machida

Shinya Yamakawa

Naoki Saka

Yasunori Sogoh

Tadayuki Taura

Akihiko Kato

Atsushi Masagaki

Ryoto Yoshita

Shinichi Yoshimura

Yoshimichi Kumagai

Naoshi Ikeda

Hidetoshi Yamanaka

A display apparatus includes: a first semiconductor substrate that includes a light emitting unit and a first drive circuit, the first drive circuit driving the light emitting unit; and a second semiconductor substrate that includes a second drive circuit to be electrically connected to the first drive circuit, the second semiconductor substrate being bonded to the first semiconductor substrate.

Display apparatus and method of producing the same

A solid-state image pickup device includes a plurality of pixels, a pixel connection section, and a pixel reset section. The plurality of pixels each include a photoelectric conversion section that generates a charge according to irradiated light, a charge holding section that holds the generated charge, and a signal generation section that generates as an image signal a signal according to the held charge. The pixel connection section conducts between charge holding sections of the plurality of pixels and thereby allows each of the charge holding sections of the plurality of pixels to hold the charge that has been generated by the photoelectric conversion section of one pixel of the plurality of pixels. The pixel reset section discharges and resets the charge of the respective charge holding sections of the plurality of pixels when the pixel connection section conducts between the respective charge holding sections of the plurality of pixels.

Solid-state image pickup device and image pickup apparatus

The present disclosure relates to an imaging device and an electronic device that make it possible to obtain a better pixel signal. A photoelectric conversion part that converts received light into a charge, and a holding part that holds a charge transferred from the photoelectric conversion part are provided, the photoelectric conversion part and the holding part are formed in a semiconductor substrate having a predetermined thickness, and the holding part is formed with a thickness that is half or less of the predetermined thickness. A charge capturing region that captures a charge is further provided on a light incident side of a region where the holding part is formed. A light shielding part that shields light is formed between the photoelectric conversion part and the charge capturing region. The present technology is applicable to an imaging device.

Imaging device and electronic device

A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.

Solid-state imaging device, method of manufacturing solid-state imaging device and electronic apparatus

Disclosed herein is a solid-state image taking apparatus, includes: a pixel array section including unit pixels laid out two-dimensionally to form a matrix to serve as unit pixels each employing an opto-electric conversion device, a transfer transistor, a first electric-charge accumulation section, a read transistor, a second electric-charge accumulation section, a reset transistor, and an amplification transistor; a driving section; and a correction section.

Solid-state image taking apparatus, method for driving solid-state image taking apparatus and electronic apparatus

Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.

Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

A solid-state image pickup device in which electric charges accumulated in a photodiode conversion element are transferred to a second diffusion layer through a first diffusion layer.

Solid-state image pickup device, image pickup apparatus including the same, and method of manufacturing the same

To arrange diffusion-inhibitory films, andfor inhibiting the diffusion of a wiring material absent in a region on or above a light receiving unit, the diffusion-inhibitory films, andformed on a region above the light receiving unitare selectively removed. Alternatively, the diffusion-inhibitory films are arranged only on top surfaces of wirings, and, and only a passivation filmand interlayer insulating films, andare arranged in the region on or above the light receiving unit. Thus, with less interface between different insulation films and less reflection of incident light in an incident region, the incident lighthighly efficiently passes through these insulating films and comes into the light receiving unit. The light receiving unitcan thereby receive a sufficient quantity of the incident light

Solid state imaging device having wirings with diffusion prevention film

To arrange diffusion-inhibitory films,, andfor inhibiting the diffusion of a wiring material absent in a region on or above a light receiving unit, the diffusion-inhibitory films,, andformed on a region above the light receiving unitare selectively removed. Alternatively, the diffusion-inhibitory films are arranged only on top surfaces of wirings,, and, and only a passivation filmand interlayer insulating films,, andare arranged in the region on or above the light receiving unit. Thus, with less interface between different insulation films and less reflection of incident light in an incident region, the incident lighthighly efficiently passes through these insulating films and comes into the light receiving unit. The light receiving unitcan thereby receive a sufficient quantity of the incident light

Solid-state imaging device, solid-state imaging apparatus and methods for manufacturing the same

A semiconductor memory device has SRAM cells each including: a pair of inverters; a feed control switch connected between a feeding point of the pair of inverters and a power supply voltage supply line; and a boosting device configured to boost a voltage of the feeding point electrically isolated from the power supply voltage supply line by the feed control switch.

Semiconductor memory device

A semiconductor device including: a bulk semiconductor substrate; an access transistor; a thruster formed on the bulk semiconductor substrate connecting to the access transistor; an element separating region to separate the region for the access transistor and the region for the thruster from each other; and a wiring layer connecting one of the diffused layers of the access transistor and the cathode of the thruster together through a connecting hole, the impurity region at the anode side of the thruster being composed of a p-type impurity region, an n-type impurity region, p-type impurity region, and an n-type impurity region, which are formed sequentially in the depth wise direction, with the lowermost n-type impurity region receiving the same voltage as that applied to the anode at the time of data holding.

Transistor controlled thyristor memory device

To arrange diffusion-inhibitory filmsandfor inhibiting the diffusion of a wiring material absent in a region on or above a light receiving unitthe diffusion-inhibitory filmsandformed on a region above the light receiving unitare selectively removed. Alternatively, the diffusion-inhibitory films are arranged only on top surfaces of wiringsandand only a passivation filmand interlayer insulating filmsandare arranged in the region on or above the light receiving unitThus, with less interface between different insulation films and less reflection of incident light in an incident region, the incident lighthighly efficiently passes through these insulating films and comes into the light receiving unitThe light receiving unitcan thereby receive a sufficient quantity of the incident light

A semiconductor nonvolatile memory device using SA-STI cells improved in quality and suitable for increasing the degree of integration is provided with a semiconductor substrate having in its surface a channel formation region; an element isolation insulating film buried in a trench formed in the semiconductor substrate so as to divide the channel formation region into a plurality of regions; a gate insulating film formed on the channel formation region; a floating gate provided with a first floating gate formed at an upper layer of the gate insulating film and second floating gates formed at facing sides of the same; an inter-layer insulating film formed at an upper layer of the first floating gate and the second floating gates; a control gate formed at an upper layer of the inter-layer insulating film; and a source-drain region former connected to the channel formation region.

Growing community of inventors

Kanagawa, Japan

Ikuhiro Yamamura