Hamamatsu-Photonics K.k.

Kyoritsu Chemical & Co., Ltd.

Iku Sano

Takeshi Sakamoto

Yasutaka Suzuki

Daisuke Kurita

Takafumi Ogiwara

Yasunobu Matsumoto

Katsuhiro Korematsu

A workpiece cutting method includes: a first step of pasting an expandable sheet on a workpiece; a second step of irradiating, after the first step, the workpiece with laser light to form a modified region and expanding the expandable sheet to divide the workpiece into a plurality of chips, and meanwhile, to form a gap disposed between the plurality of chips and extending to a side surface of the workpiece; a third step of irradiating the expandable sheet with an ultraviolet light after the first step; a fourth step of filling, after the second step and the third step, the gap with resin from an outer edge part of the workpiece including the side surface; a fifth step of curing the resin after the fourth step; and a sixth step of taking out the chips from above the expandable sheet after the fifth step.

Workpiece cutting method and resin applying device

A laser processing device includes a control unit, and the control unit executes a first process of controlling a laser irradiation unit according to a first processing condition set such that a modified region and a modified region are formed inside a wafer; a second process of identifying a state related to each of the modified regions, and of determining whether or not the first processing condition is proper; a third process of controlling the laser irradiation unit according to a second processing condition set such that the modified regions are formed and a modified region is formed between the modified regions in a thickness direction of the wafer inside the wafer; and a fourth process of identifying a state related to each of the modified regions, and of determining whether or not the second processing condition is proper.

Laser processing device and laser processing method

An inspecting device includes a stage configured to support a wafer in which a plurality of rows of modified regions are formed in a semiconductor substrate, a light source configured to output, an objective lens configured to pass light propagated through the semiconductor substrate, a light detection part configured to detect light passing through the objective lens, and an inspection part configured to inspect a tip position of a fracture in an inspection region between a back surface and the modified region closest to the back surface of the semiconductor substrate. The objective lens aligns a focus from the back surface side in an inspection region. The light detection part detects light propagating from the front surface side of the semiconductor substrate to the back surface side.

Laser processing method, semiconductor device manufacturing method, and examination device

An inspection device includes a laser irradiation unit irradiating a wafer with laser light, a display displaying information, and a control unit. The control unit is constituted to execute deriving of an estimated processing result including information a modified region and a crack extending from the modified region formed on the wafer when the wafer is irradiated with the laser light by the laser irradiation unit on the basis of set recipes (processing conditions), and controlling the display so as to display an estimated processing result image depicting both a graphic image of the wafer and a graphic image of the modified region and the crack in the wafer in consideration of positions of the modified region and the crack in the wafer derived as the estimated processing result.

Inspection device and processing system

A laser processing device includes a stage; a laser irradiation unit; an image capturing unit; a control portion configured to execute controlling the laser irradiation unit such that one or a plurality of modified regions are formed inside the semiconductor substrate when the wafer is irradiated with the laser light, determining whether or not a crack extending from the modified region is in a crack reaching state where the crack has reached a front surface side of the semiconductor substrate on the basis of a signal output from the image capturing unit, and deriving information related to adjustment of irradiation conditions of the laser irradiation unit on the basis of determination results.

Inspection device and inspection method

An inspecting device includes a stage configured to support a wafer in which a plurality of rows of modified regions are formed in a semiconductor substrate, a light source configured to output light, an objective lens configured to pass light propagated through the semiconductor substrate, a light detection part configured to detect light passing through the objective lens, and an inspection part configured to inspect whether or not there is a tip of a fracture in an inspection region between a front surface and the modified region closest to the front surface of the semiconductor substrate. The objective lens positions a virtual focus symmetrical with a focus with respect to the front surface in the inspection region. The light detection part detects light propagating from the back surface side of the semiconductor substrate to the back surface side via the front surface.

Growing community of inventors

Hamamatsu, Japan

Iku Sano