Samsung Electronics Co., Ltd.

Iksoo Kim

Jiwoon Im

Sungsoo Kim

Junwon Lee

Donghyun Roh

Jinyong Kim

Sunki Min

Kwangtae Hwang

Sangkoo Kang

Geumbi Mun

Jaehong Kim

Changsoo Lee

Sangho Rha

Sangkyung Lee

Jongmyeong Lee

Byungsun Park

Seonkyu Shin

A semiconductor device includes a memory cell structure on a substrate, and a dummy structure on a side of the memory cell structure. The memory cell structure includes a memory stack structure including interlayer insulating layers and gate electrodes alternately stacked on the substrate, channel structures penetrating through the memory stack structure and contacting the substrate, and first separation structures penetrating through the memory stack structure and extending in the first direction to separate the gate electrodes from each other in a second direction. The dummy structure includes dummy stack structures spaced apart from the memory stack structure and including first insulating layers and dummy gate electrodes alternately stacked, dummy channel structures penetrating through the dummy stack structures, and second separation structures penetrating through the dummy stack structures and extending in the second direction to separate the dummy gate electrodes from each other in the first direction.

Semiconductor device and data storage system including the same

A method includes: forming a sacrificial gate structure on the active region; forming a spacer structure including a first spacer, a second spacer, and an air-gap spacer, the air-gap spacer capped by bending an upper portion of the second spacer toward an upper portion of the first spacer; forming an insulating structure on the sides of the spacer structure; forming a gap region; and forming a gate structure including a gate dielectric layer, a gate electrode, and a gate capping layer in the gap region. The upper portion of the second spacer is in physical contact with the upper portion of the first spacer on a contact surface, and a lowermost end of the contact surface is on a level higher than an upper surface of the gate electrode with the substrate being a reference base level.

Method of forming a semiconductor device with capped air-gap spacer

A semiconductor device may comprise a stack structure on a substrate, the stack structure including a plurality of dielectric layers and a plurality of transparent conductive oxide layers, the dielectric layers and the transparent conductive oxide layers are alternately stacked, each of the dielectric layers and a corresponding one of the transparent conductive oxide layer adjacent to each other in a vertical direction have equal horizontal widths, and a channel structure extending through the stack structure, the channel structure including an information storage layer, a channel layer inside the information storage layer, and a buried dielectric layer inside the channel layer.

Semiconductor device including transparent conductive oxide layer

To manufacture an integrated circuit (IC) device, a lower structure having a step structure defining a trench is prepared. A material film is formed inside the trench. To form a material film, a first precursor including a first central element and a first ligand having a first size is supplied onto a lower structure to form a first chemisorbed layer of the first precursor on the lower structure. A second precursor including a second central element and a second ligand having a second size less than the first size is supplied onto a resultant structure including the first chemisorbed layer to form a second chemisorbed layer of the second precursor on the lower structure. A reactive gas is supplied to the first chemisorbed layer and the second chemisorbed layer.

Method of forming material film, integrated circuit device, and method of manufacturing the integrated circuit device

Provided are a method of transmitting a control command of a terminal apparatus, a terminal apparatus, and a computer program product. The method includes storing position information of at least one air cleaning apparatus in an indoor space; acquiring region-by-region air pollution information of the indoor space acquired while a moving cleaning apparatus moves in the indoor space; acquiring, based on the acquired region-by-region air pollution information of the indoor space and the position information of the at least one air cleaning apparatus in the indoor space, a control command for controlling an operation of the at least one air cleaning apparatus to supply clean air to a polluted region among regions of the indoor space; and transmitting the acquired control command to the at least one air cleaning apparatus.

Terminal apparatus and method of transmitting control command to air cleaning apparatus using air pollution information acquired while a moving cleaning apparatus moves

Provided are a radical monitoring apparatus capable of monitoring electrical diagnosis of a radical produced by direct plasma or remote plasma and the amount of change of the produced radical, and a plasma apparatus including the radical monitoring apparatus. The plasma apparatus includes a process chamber in which a plasma process is performed, a dielectric film in the process chamber and surrounding sides of a plasma discharge space in the process chamber, and a sensor inside the dielectric film and configured to monitor plasma to thereby monitor a radical generated in the plasma.

Radical monitoring apparatus and plasma apparatus including the monitoring apparatus

A semiconductor device includes a substrate including an active region extending in a first direction; a gate structure intersecting the active region and extending in a second direction on the substrate, the gate structure including a gate electrode, a gate capping layer on the gate electrode, and a plurality of spacers on side surfaces of the gate electrode; source/drain regions on the active region on at least one side of the gate structure; a first insulating layer and a second insulating layer on the source/drain regions on at least one side of the gate structure; and contact plugs on the source/drain regions and penetrating the first and second insulating layers. The plurality of spacers include a first spacer on the side surfaces of the gate electrode, an air-gap spacer on an external side surface of the first spacer, and a second spacer on an external side surface of the air-gap spacer An upper portion of the second spacer is bent towards an upper portion of the first spacer and is configured to cap the air-gap spacer.

Growing community of inventors

Yongin-si, South Korea

Iksoo Kim