Corning Incorporated

Ikerionwu Asiegbu Akwani

Robert Alan Bellman

Paul Arthur Sachenik

Thomas Paul Grandi

Lynn Bernard Simpson

The present invention provides a method of manufacturing optical devices which includes the steps of providing a substrate and forming at least one optical layer on the substrate. The optical layer is formed by a chemical vapor deposition (CVD) process which includes a deuterated source gas. The present invention also provides an optical device which includes a substrate and an optical layer including deuterium.

Using deuterated source gases to fabricate low loss GeSiON and SiON waveguides

Germanium-silicon oxide, germanium-silicon oxynitride and silica-germania-titania materials and oxynitride materials suitable for fabricating optical waveguides for liquid crystal based cross-connect optical switching devices have a refractive index of from about 1.48 to about 1.52 at 1550 nm, and a coefficient of thermal expansion at room temperature of from about 3&times;10 &deg; C. to about 4.4&times;10 &deg; C. . The compositions are adjusted so that the refractive index of the germanium-silicon oxide, germanium-silicon oxynitride or silica-germania-titania material is closely matched to the refractive index of a typical liquid crystal material whereby improved optical performance of a liquid crystal based cross-connect optical switching device is achieved. The coefficient of thermal expansion of the germanium-silicon oxide, germanium-silicon oxynitride, or silica-germania-titania material is closely matched to the coefficient of thermal expansion of silicon, whereby strain induced birefringence caused by thermal stresses is reduced or avoided.

High germanium content waveguide materials

A composition represented by the formula Si Ge O N , wherein x is from about 0.05 to about 0.6 and y is from about 0.14 to about 0.74 exhibits properties highly suited for use in fabricating waveguides for liquid crystal based optical devices. In particular, the compositions have an index of refraction of from about 1.6 to about 1.8 for light at a wavelength of 1550 nm, and/or a coefficient of thermal expansion of from about 2.5&times;10 C to about 5.0&times;10 &deg; C. . The compositions also have inherently low hydrogen content, and a high hydrogen permeability which allows better hydrogen removal by thermal annealing to provide a material which exhibits low optical losses and better etching properties than alternative materials.

Germanium silicon oxynitride high index films for planar waveguides

A composition represented by the formula Si Ge O N , wherein x is from about 0.05 to about 0.6 and y is from about 0.14 to about 0.74 exhibits properties highly suited for use in fabricating waveguides for liquid crystal based optical devices. In particular, the compositions have an index of refraction of from about 1.6 to about 1.8 for light at a wavelength of 1550 nm, and/or a coefficient of thermal expansion of from about 2.5&times;10 &deg; C. to about 5.0&times;10 &deg; C. . The compositions also have inherently low hydrogen content, and a high hydrogen permeability which allows better hydrogen removal by thermal annealing to provide a material which exhibits low optical losses and better etching properties than alternative materials.

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Corning, NY, United States of America

Ikerionwu Asiegbu Akwani