Motorola Corporation

Ik-Sung Lim

Jay Paul John

James Albert Kirchgessner

John W Steele

Richard W Mauntel

Kuntal Joardar

Vida Ilderem Burger

David Gareth Morgan

Michael H Kaneshiro

David L Stolfa

Phillip W Dahl

A method of manufacturing a heterojunction BiCMOS IC. ( ) includes forming a gate electrode ( ), forming a protective layer ( ) over the gate electrode, forming a semiconductor layer ( ) over the protective layer, depositing an electrically insulative layer ( ) over the semiconductor layer, using a mask layer ( ) to define a doped region ( ) in the semiconductor layer and to define a hole ( ) in the electrically insulative layer, forming an electrically conductive layer ( ) over the electrically insulative layer, using another mask layer ( ) to define an emitter region ( ) in the electrically conductive layer and to define an intrinsic base region ( ) and a portion of an extrinsic base region ( ) in the electrically conductive layer, and using yet another mask layer ( ) to define another portion of the extrinsic base region in the electrically conductive layer.

Method of manufacturing a heterojunction BiCMOS integrated circuit

A semiconductor structure (,) having device isolation structures (,) and shielding structures (,). The shielding structures (,) are formed in a semiconductor material (,) and the device isolation structures (,) are formed within the corresponding shielding structures (,). A noise generating device is formed within a first shielding structure (,) and a noise sensitive device is formed within a second shielding structure (,). The two shielding structures (,) are grounded and prevent noise from the noise generating device from interfering with the noise sensitive device.

Semiconductor structure and method of manufacture

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Gilbert, AZ, United States of America

Ik-Sung Lim