Skhynix Inc.

Hyundai Motor Company

Ik Joon Son

Yei Sik Jeon

Hyun Jae Lee

Jong Hee Han

Seung Hwan Kim

Duck Hoi Koo

Seung Geol Baek

Sung Bum Choi

Deuk Keun Ahn

A controller for controlling a non-volatile memory apparatus including page groups each including a plurality of pages is configured to select a target page group from the page groups, wherein the target page group includes at least one invalid page and at least one valid page, select, as a target threshold voltage distribution, a lower threshold voltage distribution of two adjacent threshold voltage distributions distinguished by an invalid read voltage, wherein the invalid read voltage is a read voltage for distinguishing between data stored in the invalid page, select, as a target memory cell, a memory cell located in the target threshold voltage distribution among a plurality of memory cells configuring the target page group, and control the non-volatile memory apparatus to perform an adjustment program operation for raising a threshold voltage of the target memory cell as much as a first voltage.

Controller and operating method thereof

A method for operating a data storage device including memory regions each including memory units of levels, the levels respectively corresponding to bitmaps, and each of the bitmaps including entries respectively corresponding to the memory regions includes controlling a read operation for a first memory unit of a first level among the levels in a first memory region among the memory regions; increasing a read count by checking a first entry corresponding to the first memory region in a first bit map corresponding to the first level, wherein each of entries included in the first bitmap reflects whether a corresponding memory region is included in at least one second memory region in which a memory unit of the first level has been read, during a predetermined period before the read operation for the first memory unit; and performing a management operation for the memory regions, based on the read count.

Data storage device and operating method thereof

The technology disclosed in this patent document can be implemented in embodiments to provide a memory system capable of improving a read operation, using an error correction technique (e.g., chipkill) that recovers data in correcting a data failure including a multibit failure, and an operation method of the memory system. The disclosed read operations based on recovery can be used for retrieving data from a memory chip by reconstructing the same data from other memory chips without accessing the memory chip and can be applied in various memory systems.

Memory system and operation method thereof

A system and method of controlling a performance of a fuel cell stack is provided. In particular, the output performance of the fuel cell stack is determined by comparing the difference between an initial voltage and a voltage after a predetermined time lapses with the difference between the initial voltage and a preset minimum voltage.

System and method for controlling performance of fuel cell stack

A data storage device includes a nonvolatile memory device including a memory block having a plurality of memory regions; and a controller suitable for searching a first memory region for which error correction is passed, by scanning the plurality of memory regions in a reverse order of a write sequence for the memory block, determining a target memory region in the memory block based on data stored in the first memory region, and performing a recovery operation for the target memory region.

Data storage device and error recovery method thereof

A data storage device may include a plurality of nonvolatile memory devices including a plurality of blocks and a controller suitable for generating super block parity data for a super block, which is formed of one or more of the plurality of blocks.

Data storage device comprising super block parity data based on page type of word line or plane

A method for operating a data storage device including a plurality of memory regions. The method includes performing a read operation for a first memory region, increasing a read count based on read sequences of the first memory region and a second memory region which has been read before the read operation for the first memory region, and performing a management operation for the plurality of memory regions based on the read count.

A control method of an operation pressure of a fuel cell system maintains a differential pressure between a hydrogen side and an air side of a fuel cell stack to minimize a crossover amount of hydrogen while allowing hydrogen purge and reduces an exhausted hydrogen amount when a purge valve is opened at the time of purging hydrogen using a differential pressure of an anode outlet and a cathode outlet to improve a hydrogen utilization rate and system efficiency. According to the control method, pressures of a cathode inlet and a cathode outlet of the fuel cell stack and a pressure of an anode outlet are controlled such that the pressure of the anode outlet of the fuel cell stack is lower than the pressure of the cathode inlet and higher than the pressure of the cathode outlet.

Method for controlling operation pressure of fuel cell system

A system and method of controlling fuel cell system is provided that simultaneously drains condensation and purges hydrogen via single valve. In particular, condensate water is drained by opening a drain-purge valve at a point in time at which a production amount of the condensate water exceeds a capacity of a water trap. An opening time of the drain-purge valve is then determined depending on a hydrogen concentration of an anode side and a target hydrogen concentration after the draining the condensate water. Hydrogen is then purged by maintaining the drain-purge valve in a state in which it is opened for the determined opening time.

Growing community of inventors

Gyeonggi-do, South Korea

Ik Joon Son