Tokyo Electron Limited

Ihsan Simms

Michael Carcasi

Joshua Hooge

Antonio Luis Pacheco Rotondaro

Joel Estrella

Mark H Somervell

Ian J Brown

Hiroshi Marumoto

Derek Bassett

Kathleen Nafus

Trace Quentin Hurd

Ainhoa Negreira

Antonio Rotondaro

An exemplary method of monitoring a bath process includes processing a first wafer by submerging the first wafer within a bath solution; capturing a video of the bath solution containing the first wafer during a first time interval; analyzing the video based on intensity of light captured in a frame of the video; and based on analyzing the video, determining a first metric of the bath solution during the first time interval.

Wafer bath imaging

A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.

Bath systems and methods thereof

A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

UV-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly

In one exemplary embodiment, described herein are innovative techniques for reducing the attractive force between particles and a substrate surface to aid in the removal of particles from the substrate surface. More specifically, a multi-electrode chuck is utilized to assist in cleaning a substrate. The multi-electrode chuck is utilized to reduce the attractive forces between particles and the substrate and to move the loosened particles that are present on the substrate surface. The electrodes of the chuck are biased with alternating current (AC) voltages with a phase shift between the electrode bias waves. The resulting electric field wave on the substrate surface loosens the particles by polarizing the particles and moves the loosened particles across the substrate.

Apparatus and method to electrostatically remove foreign matter from substrate surfaces

A method of etching a substrate includes providing an etching solution in a tank of an etch processing system, where the etch processing system is configured to control temperature of the etching solution, a concentration of the etching solution, and flow of the etching solution within the tank. The substrate contains micro-fabricated structures that have alternating layers of a first material and a second material, and the etching solution including an acid that etches the first material and results in an etch product to be moved from the substrate. The method further includes monitoring a concentration of the etch product within the etching solution, and maintaining the concentration of the etch product within the etching solution below a predetermined value to prevent deposition of the etch product on the second material in an amount that blocks etching of the first material by the etching solution.

Etching of silicon nitride and silica deposition control in 3D NAND structures

A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 nm.

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Austin, TX, United States of America

Ihsan Simms