Globalwafers Co., Ltd.

Sunedison Semiconductor Limited

Igor Rapoport

Jeffrey Louis Libbert

Gang Wang

Igor Peidous

Srikanth Kommu

Robert James Crepin

Patrick Alan Taylor

Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed. Embodiments of the assessing method may involve measuring an electrostatic parameter at an initial state and at an excited state in which charge carriers are generated.

Methods for assessing semiconductor structures

A method of preparing an iron-implanted semiconductor wafer for use in surface photovoltage iron mapping and other evaluation techniques. A semiconductor wafer is implanted with iron through the at least two different regions of the front surface of the semiconductor at different iron implantation densities, and the iron-implanted semiconductor wafer is annealed at a temperature and duration sufficient to diffuse implanted iron into the bulk region of the semiconductor wafer.

Surface photovoltage calibration standard

Growing community of inventors

Eugene, OR, United States of America

Igor Rapoport